Inventor · disambiguated record
Muralikrishnan Balakrishnan
Also filed as: BALAKRISHNAN MURALIKRISHNAN
18 granted patents·7 pending applications·295 citations·filing 2006–2025
94Inventor score
Files withMICRON TECHNOLOGY INC10AXON TECHNOLOGIES CORP3ROELOFS ANDREAS2SEAGATE TECHNOLOGY LLC2SONY CORP2
Top patents by PatentIndex Score
25 records- 0197US10879344B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 29, 2020·4 cites·28 claims
- 0297US10396145B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 27, 2019·19 cites·29 claims
- 0397US9112138B2Methods of forming resistive memory elementsRAMASWAMY D V NIRMAL·Filed 2012·Granted Aug 18, 2015·23 cites·17 claims
- 0497US7385219B2Optimized solid electrolyte for programmable metallization cell devices and structuresAXON TECHNOLOGIES CORP·Filed 2007·Granted Jun 10, 2008·63 cites·21 claims
- 0597US7372065B2Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming sameAXON TECHNOLOGIES CORP·Filed 2007·Granted May 13, 2008·98 cites·20 claims
- 0696US7402847B2Programmable logic circuit and method of using sameAXON TECHNOLOGIES CORP·Filed 2006·Granted Jul 22, 2008·67 cites·20 claims
- 0790US11043497B1Integrated memory having non-ohmic devices and capacitorsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 22, 2021·4 cites·49 claims
- 0886US9419220B2Resistive memory elements, resistive memory cells, and resistive memory devicesMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 16, 2016·4 cites·20 claims
- 0979US9577192B2Method for forming a metal cap in a semiconductor memory deviceSONY CORP·Filed 2014·Granted Feb 21, 2017·3 cites·20 claims
- 1072US11600691B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 7, 2023·0 cites·13 claims
- 1167US2025365924A1Memory Circuitry And Methods Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1266US8054706B2Sensor protection using a non-volatile memory cellSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Nov 8, 2011·2 cites·20 claims
- 1364US10680057B2Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 9, 2020·0 cites·14 claims
- 1460US8686388B2Non-volatile resistive sense memory with improved switchingROELOFS ANDREAS·Filed 2012·Granted Apr 1, 2014·2 cites·20 claims
- 1560US2021265355A1Integrated Memory Having Non-Ohmic Devices and CapacitorsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 1660US2025275115A1Memory Circuitry And Methods Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1759US8134138B2Programmable metallization memory cell with planarized silver electrodeWEI TIAN·Filed 2009·Granted Mar 13, 2012·4 cites·8 claims
- 1856US8288254B2Programmable metallization memory cell with planarized silver electrodeTIAN WEI·Filed 2012·Granted Oct 16, 2012·1 cites·18 claims
- 1951US2024045604A1Self-aligned techniques for forming connections in a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2049US2017133585A1Method for forming a metal cap in a semiconductor memory deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Application pending·0 cites
- 2148US2010109085A1Memory device designSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 2245US8227783B2Non-volatile resistive sense memory with praseodymium calcium manganese oxideROELOFS ANDREAS·Filed 2009·Granted Jul 24, 2012·1 cites·16 claims
- 2344US8309945B2Programmable metallization memory cell with planarized silver electrodeTIAN WEI·Filed 2012·Granted Nov 13, 2012·0 cites·20 claims
- 2441US2014306172A1Integrated circuit system with non-volatile memory and method of manufacture thereofSONY CORP·Filed 2013·Application pending·0 cites
- 2533US8421048B2Non-volatile memory with active ionic interface regionVAITHYANATHAN VENUGOPALAN·Filed 2009·Granted Apr 16, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →