Inventor · disambiguated record
Myoung-Hee Han
Also filed as: HAN MYOUNG-HEE
9 granted patents·1 pending application·106 citations·filing 2000–2010
88Inventor score
Top patents by PatentIndex Score
10 records- 0189US7763887B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 27, 2010·15 cites·9 claims
- 0284US6563162B2Semiconductor memory device for reducing parasitic bit line capacitance and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 13, 2003·40 cites·28 claims
- 0374US7514736B2Semiconductor device having a capacitor and a fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·7 cites·28 claims
- 0468US6509255B2Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 21, 2003·14 cites·6 claims
- 0568US6507086B1Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 14, 2003·14 cites·4 claims
- 0662US6555450B2Contact forming method for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 29, 2003·13 cites·7 claims
- 0757US8071469B2Semiconductor device and method of fabricating the sameHAN MYOUNG-HEE·Filed 2010·Granted Dec 6, 2011·1 cites·9 claims
- 0841US7101769B2Method of forming a reliable high performance capacitor using an isotropic etching processSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 5, 2006·2 cites·15 claims
- 0941US2006255391A1Method of forming a reliable high performance capacitor using an isotropic etching processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1040US7679161B2Semiconductor device comprising fuse sectionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 16, 2010·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →