Inventor · disambiguated record
Myung-Kon Jo
Also filed as: JO MYUNG-KON
0 granted patents·7 pending applications·0 citations·filing 2024–2024
Top patents by PatentIndex Score
7 records- 0149US2025133726A1Dram device comprising bit line with reduced capacitanceTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0249US2025365929A1Dram device with sub 4f2 structure comprising switching insulating layer and multilayer structure of word lineTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0349US2025133765A1Dram device comprising switching insulating layerTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0449US2025133727A1Dram device including low capacitance bit line and switching insulating layerTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0549US2025374515A1Three-dimensional stacked dram device with sub 4f2 structure cellsTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0646US2025374526A1High bandwidth memory with sub 4f2 cellsTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
- 0744US2025133725A1Dram device having sub 4f2 structureTAESUNG ENVIRONMENTAL RES INSTITUTE CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →