Inventor · disambiguated record
Myong-Jae Kim
Also filed as: KIM MYONG-JAE
20 granted patents·1 pending application·284 citations·filing 1992–2015
95Inventor score
Top patents by PatentIndex Score
21 records- 0187US9786336B2Memory device capable of operation in wide temperature range and data processing system and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 10, 2017·11 cites·20 claims
- 0287US7236423B2Low power multi-chip semiconductor memory device and chip enable method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 26, 2007·16 cites·22 claims
- 0384US9230610B2Semiconductor memory device for use in multi-chip packageSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 5, 2016·10 cites·16 claims
- 0484US6266282B1Write method of synchronous flash memory device sharing a system bus with a synchronous random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 24, 2001·66 cites·12 claims
- 0582US6614292B1Boosting circuit of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 2, 2003·34 cites·12 claims
- 0678US7864622B2Low power multi-chip semiconductor memory device and chip enable method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 4, 2011·9 cites·16 claims
- 0777US5283764ARefresh timer for providing a constant refresh timer regardless of variations in the operating voltageSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Feb 1, 1994·44 cites·20 claims
- 0874US5519347AStart-up circuit for stable power-on of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted May 21, 1996·28 cites·9 claims
- 0973US7417896B2Flash memory device capable of reduced programming timeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·7 cites·12 claims
- 1064US7492642B2Flash memory device capable of reduced programming timeSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 17, 2009·4 cites·12 claims
- 1164US7379380B2Low power multi-chip semiconductor memory device and chip enable method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 27, 2008·4 cites·18 claims
- 1263US6762959B2Low-power nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 13, 2004·13 cites·14 claims
- 1356US7274598B2Nonvolatile integrated circuit memory devices having staged application of program voltages and methods for programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·3 cites·35 claims
- 1454US6625063B2Nonvolatile semiconductor memory device and programming method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 23, 2003·8 cites·7 claims
- 1552US5771192ABit line reference circuit for a nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 23, 1998·14 cites·20 claims
- 1651US6452847B2Testable nonvolatile semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 17, 2002·7 cites·12 claims
- 1747US7085169B2Flash memory device capable of reducing read timeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·5 cites·21 claims
- 1837US7286411B2Row decoder circuit for use in non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·0 cites·19 claims
- 1935US2013067145A1Memory device, memory system, and method of storing data using the sameKIM BYOUNG-SUL·Filed 2012·Application pending·0 cites
- 2033US7248505B2Flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 24, 2007·0 cites·29 claims
- 2129US5324970AInterconnection structure in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Jun 28, 1994·1 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →