Inventor · disambiguated record
N. Mark Williams
Also filed as: WILLIAMS N MARK
11 granted patents·408 citations·filing 2001–2015
92Inventor score
Top patents by PatentIndex Score
11 records- 0196US6692568B2Method and apparatus for producing MIIIN columns and MIIIN materials grown thereonKYMA TECHNOLOGIES INC·Filed 2001·Granted Feb 17, 2004·198 cites·93 claims
- 0295US7777217B2Inclusion-free uniform semi-insulating group III nitride substrate and methods for making sameKYMA TECHNOLOGIES INC·Filed 2006·Granted Aug 17, 2010·22 cites·10 claims
- 0395US6787010B2Non-thermionic sputter material transport device, methods of use, and materials produced therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Sep 7, 2004·59 cites·57 claims
- 0495US6784085B2MIIIN based materials and methods and apparatus for producing sameUNIV NORTH CAROLINA STATE·Filed 2001·Granted Aug 31, 2004·96 cites·49 claims
- 0593US7897490B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2006·Granted Mar 1, 2011·16 cites·26 claims
- 0689US9263266B2Group III nitride articles and methods for making sameKYMA TECHNOLOGIES INC·Filed 2015·Granted Feb 16, 2016·4 cites·22 claims
- 0789US8349711B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2011·Granted Jan 8, 2013·6 cites·18 claims
- 0881US8202793B2Inclusion-free uniform semi-insulating group III nitride substrates and methods for making samePREBLE EDWARD A·Filed 2010·Granted Jun 19, 2012·4 cites·12 claims
- 0979US9082890B1Group III nitride articles having nucleation layers, transitional layers, and bulk layersKYMA TECHNOLOGIES INC·Filed 2013·Granted Jul 14, 2015·2 cites·18 claims
- 1073US8637848B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2012·Granted Jan 28, 2014·1 cites·10 claims
- 1161US8871556B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2013·Granted Oct 28, 2014·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →