Inventor · disambiguated record
Natsuko Aota
Also filed as: AOTA NATSUKO
3 granted patents·8 pending applications·1 citations·filing 2009–2016
47Inventor score
Top patents by PatentIndex Score
11 records- 0158US9455229B2Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor elementNAMIKI PRECISION JEWEL CO LTD·Filed 2013·Granted Sep 27, 2016·1 cites·6 claims
- 0247US2016225942A1Substrate and method for manufacturing same, light-emitting element and method for manufacturing same, and device having substrate or light-emitting elementNAMIKI PRECISION JEWEL CO LTD·Filed 2014·Application pending·0 cites
- 0346US2015368832A1GaN SUBSTRATE, AND METHOD FOR MANUFACTURING GaN SUBSTRATENAMIKI PRECISION JEWEL CO LTD·Filed 2014·Application pending·0 cites
- 0439US2012018732A1Inside reforming substrate for epitaxial growth; crystal film forming element, device, and bulk substrate produced using the same; and method for producing the sameAIDA HIDEO·Filed 2009·Application pending·0 cites
- 0534US9065032B2Method for manufacturing light-emitting element, and light-emitting elementAIDA HIDEO·Filed 2012·Granted Jun 23, 2015·0 cites·7 claims
- 0632US2016265140A1Single crystal substrate, manufacturing method for single crystal substrate, manufacturing method for single crystal substrate with multilayer film, and element manufacturing methodNAMIKI PRECISION JEWEL CO LTD·Filed 2016·Application pending·0 cites
- 0731US9105472B2Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing elementAIDA HIDEO·Filed 2011·Granted Aug 11, 2015·0 cites·59 claims
- 0828US2013161794A1Internally reformed substrate for epitaxial growth, internally reformed substrate with multilayer film, semiconductor device, bulk semiconductor substrate, and manufacturing methods thereforAIDA HIDEO·Filed 2011·Application pending·0 cites
- 0928US2013082358A1Single crystal substrate with multilayer film, manufacturing method for single crystal substrate with multilayer film, and element manufacturing methodAIDA HIDEO·Filed 2011·Application pending·0 cites
- 1028US2013161797A1Single crystal substrate, manufacturing method for single crystal substrate, manufacturing method for single crystal substrate with multilayer film, and element manufacturing methodAIDA HIDEO·Filed 2011·Application pending·0 cites
- 1128US2013062734A1Crystalline film, device, and manufacturing methods for crystalline film and deviceAIDA HIDEO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →