Inventor · disambiguated record
Naoto Fujishima
Also filed as: FUJISHIMA NAOTO
51 granted patents·4 pending applications·1,737 citations·filing 1988–2023
99Inventor score
Files withFUJI ELECTRIC CO LTD42FUJI ELEC DEVICE TECH CO LTD4FUJI ELECTRIC HOLDINGS2FUJI ELECTRIC SYSTEMS CO LTD2FUJI ELECTRIC CO INC1
Top patents by PatentIndex Score
55 records- 0196US6174773B1Method of manufacturing vertical trench misfetFUJI ELECTRIC CO LTD·Filed 1999·Granted Jan 16, 2001·226 cites·2 claims
- 0295US5981996AVertical trench misfet and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1996·Granted Nov 9, 1999·165 cites·10 claims
- 0394US6316807B1Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing sameFiled 1998·Granted Nov 13, 2001·123 cites·2 claims
- 0494US5760440ABack-source MOSFETFUJI ELECTRIC CO LTD·Filed 1996·Granted Jun 2, 1998·118 cites·20 claims
- 0593US5844275AHigh withstand-voltage lateral MOSFET with a trench and method of producing the sameFUJI ELECTRIC CO LTD·Filed 1995·Granted Dec 1, 1998·139 cites·15 claims
- 0691US7800167B2Semiconductor device, battery protection circuit and battery packFUJI ELECTRIC SYSTEMS CO LTD·Filed 2007·Granted Sep 21, 2010·23 cites·13 claims
- 0790US6781197B2Trench-type MOSFET having a reduced device pitch and on-resistanceFUJI ELECTRIC CO LTD·Filed 2002·Granted Aug 24, 2004·50 cites·6 claims
- 0889US7476942B2SOI lateral semiconductor device and method of manufacturing the sameFUJI ELEC DEVICE TECH CO LTD·Filed 2007·Granted Jan 13, 2009·20 cites·20 claims
- 0989US6800904B2Semiconductor integrated circuit device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2002·Granted Oct 5, 2004·40 cites·4 claims
- 1089US5701026ALateral trench MISFETFUJI ELECTRIC CO LTD·Filed 1995·Granted Dec 23, 1997·101 cites·21 claims
- 1188US6525390B2MIS semiconductor device with low on resistance and high breakdown voltageFUJI ELECTRIC CO LTD·Filed 2001·Granted Feb 25, 2003·49 cites·19 claims
- 1285US6858500B2Semiconductor device and its manufacturing methodFUJI ELECTRIC CO LTD·Filed 2002·Granted Feb 22, 2005·34 cites·32 claims
- 1385US6664163B2Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing sameFiled 2001·Granted Dec 16, 2003·30 cites·2 claims
- 1485US5801420ALateral semiconductor arrangement for power ICSFUJI ELECTRIC CO LTD·Filed 1996·Granted Sep 1, 1998·54 cites·20 claims
- 1584US7109551B2Semiconductor deviceFUJI ELECTRIC HOLDINGS·Filed 2004·Granted Sep 19, 2006·37 cites·20 claims
- 1684US5436486AHigh voltage MIS transistor and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1993·Granted Jul 25, 1995·59 cites·7 claims
- 1784US5432370AHigh withstand voltage M I S field effect transistor and semiconductor integrated circuitFUJI ELECTRIC CO LTD·Filed 1994·Granted Jul 11, 1995·54 cites·22 claims
- 1879US5612564ASemiconductor device with limiter diodeFUJI ELECTRIC CO LTD·Filed 1995·Granted Mar 18, 1997·44 cites·8 claims
- 1978US6624470B2Semiconductor device and a method for manufacturing sameFUJI ELECTRIC CO LTD·Filed 2002·Granted Sep 23, 2003·20 cites·3 claims
- 2078US5885878ALateral trench MISFET and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1997·Granted Mar 23, 1999·49 cites·2 claims
- 2174US7445983B2Method of manufacturing a semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2007·Granted Nov 4, 2008·4 cites·7 claims
- 2273US5591657ASemiconductor apparatus manufacturing method employing gate side wall self-aligning for maskingFUJI ELECTRIC CO LTD·Filed 1994·Granted Jan 7, 1997·35 cites·24 claims
- 2372US8378418B2Semiconductor device, battery protection circuit and battery packFUJI ELECTRIC CO LTD·Filed 2010·Granted Feb 19, 2013·3 cites·19 claims
- 2472US6639274B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Oct 28, 2003·17 cites·20 claims
- 2571US6066863ALateral semiconductor arrangement for power IGSFUJI ELECTRIC CO LTD·Filed 1998·Granted May 23, 2000·26 cites·6 claims
- 2670US8084812B2Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the sameKITAMURA MUTSUMI·Filed 2009·Granted Dec 27, 2011·10 cites·3 claims
- 2770US7687385B2Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the sameFUJI ELECTRIC HOLDINGS·Filed 2007·Granted Mar 30, 2010·2 cites·7 claims
- 2870US7256086B2Trench lateral power MOSFET and a method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2006·Granted Aug 14, 2007·4 cites·7 claims
- 2970US5739061AMethod of manufacturing a semiconductor device using gate side wall as mask for self-alignmentFUJI ELECTRIC CO LTD·Filed 1995·Granted Apr 14, 1998·31 cites·12 claims
- 3065US5523599AHigh voltage MIS field effect transistorFUJI ELECTRIC CO LTD·Filed 1994·Granted Jun 4, 1996·24 cites·21 claims
- 3163US9892919B2Semiconductor device manufacturing methodFUJI ELECTRIC CO LTD·Filed 2015·Granted Feb 13, 2018·1 cites·15 claims
- 3262US6853034B2Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2001·Granted Feb 8, 2005·6 cites·7 claims
- 3362US5705842AHorizontal MOSFETFUJI ELECTRIC CO LTD·Filed 1997·Granted Jan 6, 1998·21 cites·12 claims
- 3461US5917217ALateral field effect transistor and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1997·Granted Jun 29, 1999·20 cites·11 claims
- 3558US7365392B2Semiconductor device with integrated trench lateral power MOSFETs and planar devicesFUJI ELECTRIC CO LTD·Filed 2004·Granted Apr 29, 2008·6 cites·10 claims
- 3656US7005352B2Trench-type MOSFET having a reduced device pitch and on-resistanceFUJI ELECTRIC CO INC·Filed 2004·Granted Feb 28, 2006·7 cites·3 claims
- 3756US2024079275A1Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 3855US7902596B2Bidirectional semiconductor device and a manufacturing method thereofFUJI ELECTRIC SYSTEMS CO LTD·Filed 2004·Granted Mar 8, 2011·8 cites·45 claims
- 3953US7034377B2Semiconductor device and method of manufacturing the deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2003·Granted Apr 25, 2006·6 cites·19 claims
- 4053US7012301B2Trench lateral power MOSFET and a method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2002·Granted Mar 14, 2006·5 cites·6 claims
- 4152US7445982B2Method of manufacturing a semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2007·Granted Nov 4, 2008·0 cites·7 claims
- 4252US6740952B2High withstand voltage semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted May 25, 2004·5 cites·51 claims
- 4352US6459101B1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2000·Granted Oct 1, 2002·5 cites·29 claims
- 4451US7195980B2Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2005·Granted Mar 27, 2007·0 cites·9 claims
- 4551US5633525ALateral field effect transistorFUJI ELECTRIC CO LTD·Filed 1995·Granted May 27, 1997·17 cites·7 claims
- 4649US7056793B2Semiconductor device and a method for manufacturing sameFUJI ELECTRIC CO LTD·Filed 2003·Granted Jun 6, 2006·3 cites·5 claims
- 4749US2008303087A1Semiconductor device with integrated trench lateral power MOSFETs and planar devicesFUJI ELECTRIC CO LTD·Filed 2008·Application pending·0 cites
- 4848US7344935B2Method of manufacturing a semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2004·Granted Mar 18, 2008·2 cites·7 claims
- 4947US7144781B2Manufacturing method of a semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted Dec 5, 2006·1 cites·21 claims
- 5047US5276339ASemiconductor with a conductivity modulating-type MISFETFUJI ELECTRIC CO LTD·Filed 1992·Granted Jan 4, 1994·11 cites·10 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →