Inventor · disambiguated record
Nanbo Gong
Also filed as: GONG NANBO
43 granted patents·11 pending applications·68 citations·filing 2019–2024
96Inventor score
Files withIBM54
Top patents by PatentIndex Score
54 records- 0198US11430510B2Multi-level ferroelectric field-effect transistor devicesIBM·Filed 2020·Granted Aug 30, 2022·6 cites·19 claims
- 0298US11302810B1Ferroelectric field effect transistor with nanowire coreIBM·Filed 2020·Granted Apr 12, 2022·5 cites·20 claims
- 0398US11232824B1Non-volatile analog resistive memory cells implementing ferroelectric select transistorsIBM·Filed 2020·Granted Jan 25, 2022·16 cites·8 claims
- 0497US11856798B2Resistive random-access memory random number generatorIBM·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0596US11437102B1Memory erasure using proximity heatersIBM·Filed 2021·Granted Sep 6, 2022·5 cites·25 claims
- 0692US10784313B1Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCMIBM·Filed 2019·Granted Sep 22, 2020·12 cites·20 claims
- 0790US11805713B2Drift mitigation for resistive memory devicesIBM·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
- 0889US10832773B1Architecture for enabling zero value shiftingIBM·Filed 2019·Granted Nov 10, 2020·8 cites·22 claims
- 0986US11653578B2Phase-change material-based XOR logic gatesIBM·Filed 2020·Granted May 16, 2023·1 cites·18 claims
- 1086US11631462B2Temperature assisted programming of flash memory for neuromorphic computingIBM·Filed 2020·Granted Apr 18, 2023·2 cites·10 claims
- 1183US11647684B2Nonvolatile tunable capacitive processing unitIBM·Filed 2021·Granted May 9, 2023·1 cites·6 claims
- 1283US11004511B2Memory device having separate programming and resistance readout controlIBM·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 1379US11910734B2Phase change memory cell with ovonic threshold switchIBM·Filed 2023·Granted Feb 20, 2024·0 cites·20 claims
- 1478US11818971B2PCM cell with resistance drift correctionIBM·Filed 2022·Granted Nov 14, 2023·0 cites·19 claims
- 1578US11631809B2In-memory resistive random access memory XOR logic using complimentary switchingIBM·Filed 2020·Granted Apr 18, 2023·1 cites·20 claims
- 1677US11688457B2Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computingIBM·Filed 2020·Granted Jun 27, 2023·1 cites·3 claims
- 1776US12058943B2Phase-change material-based XOR logic gatesIBM·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 1875US11948618B2Non-volatile analog resistive memory cells implementing ferroelectric select transistorsIBM·Filed 2023·Granted Apr 2, 2024·0 cites·20 claims
- 1974US11145814B2Phase change memory with conductive bridge filamentIBM·Filed 2019·Granted Oct 12, 2021·2 cites·17 claims
- 2070US11805714B2Phase change memory with conductive bridge filamentIBM·Filed 2021·Granted Oct 31, 2023·0 cites·18 claims
- 2169US11727977B2Non-volatile analog resistive memory cells implementing ferroelectric select transistorsIBM·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 2268US11665983B2Phase change memory cell with ovonic threshold switchIBM·Filed 2020·Granted May 30, 2023·0 cites·18 claims
- 2367US11864474B2ReRAM analog PUF using filament locationIBM·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 2464US12272657B2RRAM filament location for physically unclonable functionIBM·Filed 2022·Granted Apr 8, 2025·0 cites·8 claims
- 2564US11563173B2PCM cell with resistance drift correctionIBM·Filed 2020·Granted Jan 24, 2023·0 cites·14 claims
- 2663US12364174B2Global heater for phase change memoryIBM·Filed 2021·Granted Jul 15, 2025·0 cites·20 claims
- 2763US12026605B2FeFET unit cells for neuromorphic computingIBM·Filed 2020·Granted Jul 2, 2024·0 cites·20 claims
- 2862US11942388B2Temperature-assisted device with integrated thin-film heaterIBM·Filed 2021·Granted Mar 26, 2024·0 cites·16 claims
- 2961US2025374583A1HYBRID HfO2-BASED FERROELECTRIC FIELD EFFECT TRANSISTOR AND METAL-FERROELECTRIC-SEMICONDUCTOR CAPACITOR FOR TRAINING AND/OR FINE-TUNINGIBM·Filed 2024·Application pending·0 cites
- 3061US2025359065A1Vertical ferroelectric field effect transistor with epitaxial channelIBM·Filed 2024·Application pending·0 cites
- 3161US2025374602A1Tensile stressed nfet nanosheetsIBM·Filed 2024·Application pending·0 cites
- 3260US11818886B2Low program voltage flash memory cells with embedded heater in the control gateIBM·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 3360US11456308B2Low-voltage flash memory integrated with a vertical field effect transistorIBM·Filed 2020·Granted Sep 27, 2022·0 cites·21 claims
- 3459US12484235B2Solid-state switchIBM·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 3559US12396376B2Piezoelectric memoryIBM·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 3659US11915751B2Nonvolatile phase change material logic deviceIBM·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 3759US11557342B2Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar arrayIBM·Filed 2021·Granted Jan 17, 2023·0 cites·9 claims
- 3859US2025185303A1Compressive strain in stacked nanosheet field effect transistorIBM·Filed 2023·Application pending·0 cites
- 3959US2024202512A1Non-volatile memory-based activation functionIBM·Filed 2022·Application pending·0 cites
- 4058US11844293B2Physical unclonable function device with phase changeIBM·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
- 4158US11790243B1Ferroelectric field effect transistor for implementation of decision treeIBM·Filed 2022·Granted Oct 17, 2023·0 cites·15 claims
- 4258US11322202B1Semiconductor logic circuits including a non-volatile memory cellIBM·Filed 2021·Granted May 3, 2022·0 cites·20 claims
- 4358US11139025B2Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar arrayIBM·Filed 2020·Granted Oct 5, 2021·0 cites·5 claims
- 4458US2025348451A1Cross-point array with matched filters for noise reductionIBM·Filed 2024·Application pending·0 cites
- 4557US12099616B2Physically unclonable function based on a phase change material arrayIBM·Filed 2021·Granted Sep 24, 2024·0 cites·14 claims
- 4655US11929404B2Transistor gates having embedded metal-insulator-metal capacitorsIBM·Filed 2021·Granted Mar 12, 2024·0 cites·20 claims
- 4755US11177225B2Semiconductor device including physical unclonable functionIBM·Filed 2020·Granted Nov 16, 2021·0 cites·20 claims
- 4855US2024088065A1Ferroelectric memory device erasureIBM·Filed 2022·Application pending·0 cites
- 4955US2023040983A1Spike-timing-dependent plasticity using inverse resistivity phase-change materialIBM·Filed 2021·Application pending·0 cites
- 5054US11923458B2FeFET with double gate structureIBM·Filed 2021·Granted Mar 5, 2024·0 cites·9 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →