Inventor · disambiguated record
Nazila Haratipour
Also filed as: HARATIPOUR NAZILA
33 granted patents·43 pending applications·72 citations·filing 2018–2024
95Inventor score
Top patents by PatentIndex Score
76 records- 0197US11063131B2Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineeringINTEL CORP·Filed 2019·Granted Jul 13, 2021·31 cites·11 claims
- 0296US11843058B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2021·Granted Dec 12, 2023·3 cites·18 claims
- 0395US11171243B2Transistor structures with a metal oxide contact bufferINTEL CORP·Filed 2019·Granted Nov 9, 2021·11 cites·14 claims
- 0492US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 0588US11417770B2Vertical thin-film transistors between metal layersINTEL CORP·Filed 2018·Granted Aug 16, 2022·5 cites·25 claims
- 0687US11316027B2Relaxor ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0787US11138499B2Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuitsINTEL CORP·Filed 2018·Granted Oct 5, 2021·5 cites·19 claims
- 0883US11398560B2Contact electrodes and dielectric structures for thin film transistorsINTEL CORP·Filed 2018·Granted Jul 26, 2022·3 cites·17 claims
- 0981US12349416B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 1080US12119387B2Low resistance approaches for fabricating contacts and the resulting structuresINTEL CORP·Filed 2020·Granted Oct 15, 2024·1 cites·10 claims
- 1174US2025006434A1Ferroelectric capacitor with insulating thin filmINTEL CORP·Filed 2024·Application pending·0 cites
- 1272US11522060B2Epitaxial layers on contact electrodes for thin- film transistorsINTEL CORP·Filed 2018·Granted Dec 6, 2022·1 cites·24 claims
- 1371US11727260B2Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuitsINTEL CORP·Filed 2021·Granted Aug 15, 2023·0 cites·19 claims
- 1471US2024373644A1Ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 1570US11527656B2Contact electrodes for vertical thin-film transistorsINTEL CORP·Filed 2018·Granted Dec 13, 2022·1 cites·20 claims
- 1669US11721735B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 1769US11626475B2Trench capacitor with extended dielectric layerINTEL CORP·Filed 2019·Granted Apr 11, 2023·1 cites·25 claims
- 1867US11843054B2Vertical architecture of thin film transistorsINTEL CORP·Filed 2018·Granted Dec 12, 2023·1 cites·23 claims
- 1964US12040378B2Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineeringINTEL CORP·Filed 2021·Granted Jul 16, 2024·0 cites·9 claims
- 2060US11532439B2Ultra-dense ferroelectric memory with self-aligned patterningINTEL CORP·Filed 2019·Granted Dec 20, 2022·1 cites·20 claims
- 2160US2025309115A1Integrated circuit structures having staggered backside interconnectsINTEL CORP·Filed 2024·Application pending·0 cites
- 2260US2025379140A1Device, method and system for providing (anti)ferroelectric capacitors of various thicknessesINTEL CORP·Filed 2024·Application pending·0 cites
- 2359US2025008740A1Self-aligned memory cell with replacement metal gate vertical access transistor and stacked 3d capacitorsINTEL CORP·Filed 2023·Application pending·0 cites
- 2459US2025212441A1Incorporation of semiconductor doping materials in metal contacts via reactive sputteringINTEL CORP·Filed 2023·Application pending·0 cites
- 2558US12048165B2Ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Jul 23, 2024·0 cites·16 claims
- 2658US2025311370A1Stacked transistor architectures including source & drain structures with molybdenumINTEL CORP·Filed 2024·Application pending·0 cites
- 2757US12426342B2Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stabilityINTEL CORP·Filed 2021·Granted Sep 23, 2025·0 cites·8 claims
- 2857US2025212507A1Cmos metal contacts with dopant diffusion barriersINTEL CORP·Filed 2023·Application pending·0 cites
- 2957US2025220932A1Defect self-compensation materials for high endurance (anti-)ferroelectric capacitors with hafnium oxide based material systemsINTEL CORP·Filed 2023·Application pending·0 cites
- 3057US2025220958A1Source/drain contact trench with dielectric liner on contact metalINTEL CORP·Filed 2023·Application pending·0 cites
- 3156US12439669B2Co-deposition of titanium and silicon for improved silicon germanium source and drain contactsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·20 claims
- 3256US12349442B2Thin film transistors having semiconductor structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
- 3356US2025220921A1Enhancing device performance by mitigation of oxygen migration in hafnium oxide based material systemsINTEL CORP·Filed 2023·Application pending·0 cites
- 3455US2025006433A1Thin hafnium-zirconium oxide films having large grain size for ferroelectric capacitorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3555US2024114695A1High endurance super-lattice anti-ferroelectric capacitorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3654US12170319B2Dual contact process with stacked metal layersINTEL CORP·Filed 2020·Granted Dec 17, 2024·0 cites·20 claims
- 3754US11923290B2Halogen treatment for NMOS contact resistance improvementINTEL CORP·Filed 2020·Granted Mar 5, 2024·0 cites·14 claims
- 3854US2024114693A1Self-aligned patterning of plate lines in three-dimensional ferroelectric capacitorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3953US2020286686A1Ferroelectric capacitor with insulating thin filmINTEL CORP·Filed 2019·Application pending·0 cites
- 4052US12328927B2Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structuresINTEL CORP·Filed 2020·Granted Jun 10, 2025·0 cites·20 claims
- 4152US2024105508A1Integrated circuit devices with contacts using nitridized molybdenumINTEL CORP·Filed 2022·Application pending·0 cites
- 4252US2023197800A1Non-reactive epi contact for stacked transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 4352US2024112714A1Selective ferroelectric deployment for single-transistor, multiple-capacitor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 4452US2024006506A1Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 4552US2024114694A1Ferroelectric capacitor within backside interconnectINTEL CORP·Filed 2022·Application pending·0 cites
- 4652US2024113101A1Capacitor structure embedded within source or drain regionINTEL CORP·Filed 2022·Application pending·0 cites
- 4752US2024114696A1Improved replacement electrode process for 3d ferroelectric memoryINTEL CORP·Filed 2022·Application pending·0 cites
- 4852US2024112730A1Device, method and system to provide a random access memory with a ferroelectric resistive junctionINTEL CORP·Filed 2022·Application pending·0 cites
- 4951US11777029B2Vertical transistors for ultra-dense logic and memory applicationsINTEL CORP·Filed 2019·Granted Oct 3, 2023·0 cites·20 claims
- 5051US2024114692A1Inverted ferroelectric and antiferrolecetric capacitorsINTEL CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →