Inventor · disambiguated record
Naoki Hase
Also filed as: HASE NAOKI
26 granted patents·7 pending applications·102 citations·filing 1996–2024
94Inventor score
Files withTOSHIBA KK12SAMSUNG ELECTRONICS CO LTD9SONY SEMICONDUCTOR SOLUTIONS CORP7KIKUCHI TAKASHI2HASE NAOKI1
Top patents by PatentIndex Score
33 records- 0191US12052930B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 30, 2024·1 cites·27 claims
- 0288US10964366B2Magnetic memory, recording method of magnetic memory, and reading method of magnetic memorySONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted Mar 30, 2021·5 cites·11 claims
- 0385US7101455B1Method and device for manufacturing laminated plateKANEKA CORP·Filed 2000·Granted Sep 5, 2006·30 cites·4 claims
- 0484US9991314B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2016·Granted Jun 5, 2018·2 cites·20 claims
- 0583US2024387089A1Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0683US2024334840A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0780US9793469B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2016·Granted Oct 17, 2017·3 cites·19 claims
- 0879US5932345AThermally fusible adhesive copolymer, articles made therefrom, and method for producing the sameKANEGAFUCHI CHEMICAL IND·Filed 1996·Granted Aug 3, 1999·41 cites·19 claims
- 0978US12080459B2Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·36 claims
- 1078US10256394B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2017·Granted Apr 9, 2019·1 cites·16 claims
- 1176US9013837B2Magnetoresistive element including a changing composition as distance increases away from an intermediate film, and magnetic head with the sameTOSHIBA KK·Filed 2014·Granted Apr 21, 2015·3 cites·14 claims
- 1275US8913351B2Magnetoresistance effect element, magnetic head, magnetic head assembly, and magnetic recording and reproducing deviceTOSHIBA KK·Filed 2014·Granted Dec 16, 2014·3 cites·21 claims
- 1374US11069389B2Magnetic memory and magnetic memory recording methodSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted Jul 20, 2021·3 cites·8 claims
- 1472US9112140B2Magnetoresistive effect element with an oscillation layerTOSHIBA KK·Filed 2014·Granted Aug 18, 2015·2 cites·16 claims
- 1572US8970993B2Magnetoresistive magnetic head with magnetoresistive film including a metal layer and a Heusler alloy layer, and magnetic recording and reproducing apparatusTOSHIBA KK·Filed 2014·Granted Mar 3, 2015·2 cites·24 claims
- 1671US10964604B2Magnetic storage element, magnetic storage device, electronic device, and method of manufacturing magnetic storage elementSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Granted Mar 30, 2021·1 cites·10 claims
- 1771US10783932B2Magnetic memory, semiconductor device, electronic device, and method of reading magnetic memorySONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Granted Sep 22, 2020·1 cites·12 claims
- 1871US8953286B2Magnetoresistive element with aluminum or iron concentration ratio changed in film-thickness directionTOSHIBA KK·Filed 2014·Granted Feb 10, 2015·2 cites·12 claims
- 1969US11935677B2Magnetic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·20 claims
- 2067US10340442B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2017·Granted Jul 2, 2019·1 cites·8 claims
- 2161US12150387B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 2260US2024251685A1Magnetic memory devices using spin current and electronic apparatuses including the magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2360US2025203877A1Magnetic memory device including tunneling magnetoresistance layer and memory device including the magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2459US11462681B2Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage elementSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Oct 4, 2022·0 cites·20 claims
- 2556US9859491B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2016·Granted Jan 2, 2018·1 cites·19 claims
- 2651US8970986B2Magnetic head and magnetic head assembly having a spin torque oscillatorTOSHIBA KK·Filed 2013·Granted Mar 3, 2015·0 cites·13 claims
- 2750US2006216502A1Bonding sheet and on-side metal-clad laminateKIKUCHI TAKASHI·Filed 2003·Application pending·0 cites
- 2848US11195989B2Ferromagnetic tunnel junction element and method of manufacturing the sameSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Granted Dec 7, 2021·0 cites·11 claims
- 2948US8879215B2Magnetoresistance effect element, magnetic head, magnetic head assembly, and magnetic recording and reproducing deviceTOSHIBA KK·Filed 2014·Granted Nov 4, 2014·0 cites·19 claims
- 3044US2006021699A1Heat-resistant flexible laminated board manufacturing methodHASE NAOKI·Filed 2003·Application pending·0 cites
- 3142US2023019156A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3240US8435641B2Process for producing heat-resistant flexible laminate and heat-resistant flexible laminate produced therebyKIKUCHI TAKASHI·Filed 2003·Granted May 7, 2013·0 cites·3 claims
- 3338US11551737B2Magnetic storage element and electronic apparatusSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted Jan 10, 2023·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →