Inventor · disambiguated record
Naoto Horiguchi
Also filed as: HORIGUCHI NAOTO
32 granted patents·10 pending applications·590 citations·filing 1991–2025
97Inventor score
Top patents by PatentIndex Score
42 records- 0193US11515399B2Self-aligned contacts for walled nanosheet and forksheet field effect transistor devicesIMEC VZW·Filed 2020·Granted Nov 29, 2022·3 cites·18 claims
- 0293US11367662B2Semiconductor devices and methods of forming the sameIMEC VZW·Filed 2020·Granted Jun 21, 2022·3 cites·17 claims
- 0392US6479112B1Glass panel and method of manufacturing thereof and spacers used for glass panelNIPPON SHEET GLASS CO LTD·Filed 1999·Granted Nov 12, 2002·107 cites·13 claims
- 0492US6351410B1Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the sameFUJITSU LTD·Filed 2000·Granted Feb 26, 2002·70 cites·35 claims
- 0591US10607896B2Method of forming gate of semiconductor device and semiconductor device having sameIMEC VZW·Filed 2017·Granted Mar 31, 2020·9 cites·17 claims
- 0689US10720363B2Method of forming vertical transistor deviceIMEC VZW·Filed 2018·Granted Jul 21, 2020·6 cites·19 claims
- 0785US10904608B2Display control method, terminal, and non-transitory computer readable recording medium storing a computer programLINE CORP·Filed 2018·Granted Jan 26, 2021·3 cites·15 claims
- 0884US9633891B2Method for forming a transistor structure comprising a fin-shaped channel structureIMEC VZW·Filed 2015·Granted Apr 25, 2017·4 cites·12 claims
- 0984US6387460B1Glass panelNIPPON SHEET GLASS CO LTD·Filed 1999·Granted May 14, 2002·52 cites·3 claims
- 1081US6541788B2Mid infrared and near infrared light upconverter using self-assembled quantum dotsUNIV CALIFORNIA·Filed 1999·Granted Apr 1, 2003·57 cites·11 claims
- 1181US5936258AOptical semiconductor memory device and read/write method thereforFUJITSU LTD·Filed 1996·Granted Aug 10, 1999·55 cites·25 claims
- 1280US10361268B2Internal spacers for nanowire semiconductor devicesIMEC VZW·Filed 2018·Granted Jul 23, 2019·3 cites·17 claims
- 1380US6054349ASingle-electron device including therein nanocrystalsFUJITSU LTD·Filed 1998·Granted Apr 25, 2000·84 cites·13 claims
- 1478US9105746B2Method for manufacturing a field effect transistor of a non-planar typeIMEC VZW·Filed 2014·Granted Aug 11, 2015·4 cites·12 claims
- 1575US6815759B2Semiconductor memory with floating gate type FETFUJITSU LTD·Filed 2000·Granted Nov 9, 2004·21 cites·6 claims
- 1675US6774430B2Non-volatile semiconductor memory device having gate insulating film with thick end sectionsFUJITSU LTD·Filed 2001·Granted Aug 10, 2004·21 cites·10 claims
- 1774US11114435B2FinFET having locally higher fin-to-fin pitchIMEC VZW·Filed 2016·Granted Sep 7, 2021·2 cites·17 claims
- 1874US6462374B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2001·Granted Oct 8, 2002·19 cites·9 claims
- 1973US6210763B1Double-glazing unitNIPPON SHEET GLASS CO LTD·Filed 1998·Granted Apr 3, 2001·38 cites·4 claims
- 2062US2025212494A1Method for Forming a Semiconductor StructureIMEC VZW·Filed 2024·Application pending·0 cites
- 2161US7468297B2Method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2005·Granted Dec 23, 2008·1 cites·20 claims
- 2258US12484289B2Method for forming a stacked transistor deviceIMEC VZW·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 2358US12446246B2Field-effect transistor deviceIMEC VZW·Filed 2022·Granted Oct 14, 2025·0 cites·22 claims
- 2458US2024234207A9Method for interconnecting a buried wiring line and a source/drain bodyIMEC VZW·Filed 2023·Application pending·0 cites
- 2557US11743529B2Display control method, terminal, and non-transitory computer readable recording medium storing a computer programLINE CORP·Filed 2020·Granted Aug 29, 2023·0 cites·20 claims
- 2656US2023197522A1Method for Forming a Semiconductor DeviceIMEC VZW·Filed 2022·Application pending·0 cites
- 2755US12457785B2Method for forming a stacked FET deviceIMEC VZW·Filed 2022·Granted Oct 28, 2025·0 cites·17 claims
- 2855US2025311444A1Semiconductor devices including pin diodes and methods of forming the sameIMEC VZW·Filed 2025·Application pending·0 cites
- 2955US2023178630A1Method for forming a fet deviceIMEC VZW·Filed 2022·Application pending·0 cites
- 3055US2023178635A1Method for forming a fet deviceIMEC VZW·Filed 2022·Application pending·0 cites
- 3154US12324175B2FET device and a method for forming a FET deviceIMEC VZW·Filed 2021·Granted Jun 3, 2025·0 cites·5 claims
- 3253US5734174APhoto hole burning memoryFUJITSU LTD·Filed 1996·Granted Mar 31, 1998·14 cites·10 claims
- 3353US2025331298A1Method for Forming an Integrated Circuit Device and an Integrated Circuit DeviceIMEC VZW·Filed 2025·Application pending·0 cites
- 3451US2023178629A1Method for forming a fet deviceIMEC VZW·Filed 2022·Application pending·0 cites
- 3548US11462443B2Self-aligned contacts for nanosheet field effect transistor devicesIMEC VZW·Filed 2020·Granted Oct 4, 2022·0 cites·18 claims
- 3647US6828629B2Semiconductor device and method of fabricating the sameFUJITSU LTD·Filed 2004·Granted Dec 7, 2004·1 cites·18 claims
- 3745US10522552B2Method of fabricating vertical transistor deviceIMEC VZW·Filed 2018·Granted Dec 31, 2019·0 cites·15 claims
- 3844US5203051AGrommet and method of inserting grommetAOYAMA SEISAKUSHO·Filed 1991·Granted Apr 20, 1993·13 cites·8 claims
- 3942US2002110653A1Glass panel, method of manufacturing the glass panel, and spacer for use in the glass panelFiled 2002·Application pending·0 cites
- 4040US7235470B2Semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2004·Granted Jun 26, 2007·0 cites·10 claims
- 4135US10439036B2Transistor device with reduced hot carrier injection effectIMEC VZW·Filed 2016·Granted Oct 8, 2019·0 cites·22 claims
- 4234US2018174927A1Contacts in Semiconductor DevicesIMEC VZW·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →