Inventor · disambiguated record
Nariaki Ikeda
Also filed as: IKEDA NARIAKI · NOMURA TAKEHIKO
13 granted patents·5 pending applications·85 citations·filing 2001–2012
91Inventor score
Top patents by PatentIndex Score
18 records- 0191US8035128B2Semiconductor device and method for fabricating the sameFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Oct 11, 2011·18 cites·6 claims
- 0286US7812371B2GaN based semiconductor elementFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Oct 12, 2010·14 cites·12 claims
- 0381US8569800B2Field effect transistorIKEDA NARIAKI·Filed 2011·Granted Oct 29, 2013·5 cites·21 claims
- 0479US8450782B2Field effect transistor, method of manufacturing field effect transistor, and method of forming grooveSATO YOSHIHIRO·Filed 2011·Granted May 28, 2013·4 cites·7 claims
- 0579US7943496B2Method of manufacturing GaN-based transistorsFURUKAWA ELECTRIC CO LTD·Filed 2010·Granted May 17, 2011·6 cites·3 claims
- 0675US8178898B2GaN-based semiconductor elementIKEDA NARIAKI·Filed 2009·Granted May 15, 2012·6 cites·19 claims
- 0773US8304809B2GaN-based semiconductor device and method of manufacturing the sameKAYA SHUSUKE·Filed 2008·Granted Nov 6, 2012·7 cites·20 claims
- 0868US8304774B2Transistor and method for fabricating the sameKAYA SHUSUKE·Filed 2010·Granted Nov 6, 2012·3 cites·8 claims
- 0967US8729603B2GaN-based semiconductor elementIKEDA NARIAKI·Filed 2012·Granted May 20, 2014·2 cites·13 claims
- 1066US8525225B2Semiconductor deviceKAMBAYASHI HIROSHI·Filed 2006·Granted Sep 3, 2013·4 cites·7 claims
- 1161US6911713B2Optical device having a carrier-depleted layerFURUKAWA ELECTRIC CO LTD·Filed 2003·Granted Jun 28, 2005·9 cites·20 claims
- 1259US8183597B2GaN semiconductor device having a high withstand voltageIKEDA NARIAKI·Filed 2005·Granted May 22, 2012·1 cites·18 claims
- 1358US6821798B2Semiconductor optical device and method for fabricating sameFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Nov 23, 2004·6 cites·18 claims
- 1445US2011318913A1Semiconductor device and method for fabricating the sameIKEDA NARIAKI·Filed 2011·Application pending·0 cites
- 1545US2011316048A1Semiconductor device and method for fabricating the sameIKEDA NARIAKI·Filed 2011·Application pending·0 cites
- 1641US2008006846A1Iii-v nitride semiconductor device and method of forming electrodeFURUKAWA ELECTRIC CO LTD·Filed 2007·Application pending·0 cites
- 1741US2010117186A1Semiconductor device and method of producing the sameKAMBAYASHI HIROSHI·Filed 2009·Application pending·0 cites
- 1835US2002100911A1Semiconductor optical device having reduced parasitic capacitanceFURUKAWA ELECTRIC CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →