Inventor · disambiguated record
Naeem Islam
Also filed as: ISLAM NAEEM
13 granted patents·26 pending applications·9 citations·filing 2020–2024
84Inventor score
Top patents by PatentIndex Score
39 records- 0196US11610991B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2020·Granted Mar 21, 2023·7 cites·22 claims
- 0285US12376319B2Support shield structures for trenched semiconductor devicesWOLFSPEED INC·Filed 2022·Granted Jul 29, 2025·1 cites·34 claims
- 0384US11664434B2Semiconductor power devices having multiple gate trenches and methods of forming such devicesCREE INC·Filed 2020·Granted May 30, 2023·1 cites·34 claims
- 0474US2024413197A1Sidewall dopant shielding methods and approaches for trenched semiconductor device structuresWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 0573US2024395927A1Power semiconductor devices including angled gate trenchesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 0673US2024290832A1Edge termination for power semiconductor devices and related fabrication methodsWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 0771US12278284B2Power semiconductor devices including a trenched gate and methods of forming such devicesWOLFSPEED INC·Filed 2023·Granted Apr 15, 2025·0 cites·26 claims
- 0871US11837657B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2023·Granted Dec 5, 2023·0 cites·23 claims
- 0970US12279448B2Trench bottom shielding methods and approaches for trenched semiconductor device structuresWOLFSPEED INC·Filed 2022·Granted Apr 15, 2025·0 cites·19 claims
- 1070US12009389B2Edge termination for power semiconductor devices and related fabrication methodsWOLFSPEED INC·Filed 2021·Granted Jun 11, 2024·0 cites·32 claims
- 1169US2023261073A1Semiconductor power devices having multiple gate trenches and methods of forming such devicesWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 1268US2023369486A1Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 1366US12080790B2Power semiconductor devices including angled gate trenchesWOLFSPEED INC·Filed 2021·Granted Sep 3, 2024·0 cites·25 claims
- 1465US11355630B2Trench bottom shielding methods and approaches for trenched semiconductor device structuresWOLFSPEED INC·Filed 2020·Granted Jun 7, 2022·0 cites·19 claims
- 1561US11640990B2Power semiconductor devices including a trenched gate and methods of forming such devicesWOLFSPEED INC·Filed 2020·Granted May 2, 2023·0 cites·24 claims
- 1660US12094926B2Sidewall dopant shielding methods and approaches for trenched semiconductor device structuresCREE INC·Filed 2020·Granted Sep 17, 2024·0 cites·19 claims
- 1760US11764295B2Gate trench power semiconductor devices having improved deep shield connection patternsWOLFSPEED INC·Filed 2020·Granted Sep 19, 2023·0 cites·21 claims
- 1858US2025324680A1Gate trench power semiconductor devices having enhanced avalanche robustness and methods of forming such devicesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1958US2025338547A1Gate trench power semiconductor devices having split gate electrodesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2056US2025254909A1Power semiconductor devices including integrated polysilicon devicesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2156US2025311318A1Power silicon carbide based semiconductor devices having super junction drift regions and methods of forming such devicesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2255US2025169128A1Gate trench power semiconductor devices with deep jfet patternsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2355US2025301699A1Gate trench power semiconductor devices having trench shielding regions and methods of forming the sameWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2454US2025120133A1Gate trench power semiconductor devices having deep support shields and methods of fabricating such deviceWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2554US2025159948A1Split support shield structures for trenched semiconductor devices with integrated schottky diodesWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2654US2025241040A1Gate trench power semiconductor devices having deep trench shield connection patternsWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2753US12176423B2FinFET power semiconductor devicesWOLFSPEED INC·Filed 2020·Granted Dec 24, 2024·0 cites·26 claims
- 2853US2025142877A1Gate trench power semiconductor devices having trench shielding regions and support shields that extend to different depthsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2953US2025169105A1Mask integration for trenched semiconductor device structuresWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3053US2025120119A1Gate trench power semiconductor devices having shaped deep support shields that reduce cell pitch and on-state resistanceWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3153US2025142868A1Gate trench power semiconductor devices having channels with horizontal and vertical segmentsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3252US2024234567A1Buried shield structures for power semiconductor devices including segmented support shield structures for reduced on-resistance and related fabrication methodsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3351US2024234495A1Gate trench power semiconductor devices having self-aligned trench shielding regions and related methodsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3450US2024234507A1Buried shield structures for power semiconductor devices and related fabrication methodsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3549US2023411446A1Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methodsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 3649US2025072044A1Power semiconductor devices having gate trenches with asymmetrically rounded upper and lower trench corners and/or recessed gate electrodes and methods of fabricating such devicesWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3747US2023420527A1Gate trench power semiconductor devices having improved breakdown performance and methods of forming such devicesWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 3845US2022149165A1Semiconductor devices including an offset metal to polysilicon gate contactCREE INC·Filed 2020·Application pending·0 cites
- 3944US2021399128A1Power devices with a hybrid gate structureCREE INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →