Inventor · disambiguated record
Nam Kyeong Kim
Also filed as: KIM NAM K · KIM NAM-KYEONG
34 granted patents·4 pending applications·142 citations·filing 1999–2023
96Inventor score
Top patents by PatentIndex Score
38 records- 0187US7456466B2NAND flash memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Nov 25, 2008·11 cites·10 claims
- 0285US7623385B2Method of reading flash memory device for depressing read disturbHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 24, 2009·17 cites·20 claims
- 0383US7800946B2Flash memory device and operating method thereofHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 21, 2010·15 cites·20 claims
- 0482US8576635B2Nonvolatile memory device and method of operating the sameKIM NAM KYEONG·Filed 2011·Granted Nov 5, 2013·11 cites·5 claims
- 0579US11646086B2Memory device and operating method thereofSK HYNIX INC·Filed 2021·Granted May 9, 2023·1 cites·15 claims
- 0678US7573089B2Non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 11, 2009·7 cites·15 claims
- 0777US9142296B2Nonvolatile memory device and method for driving the sameSK HYNIX INC·Filed 2013·Granted Sep 22, 2015·6 cites·18 claims
- 0875US6597029B2Nonvolatile semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jul 22, 2003·16 cites·7 claims
- 0969US7910430B2NAND flash memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·3 cites·10 claims
- 1066US7863671B2Nand type non-volatile memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jan 4, 2011·3 cites·11 claims
- 1165US9190164B1Semiconductor device and operating method thereofSK HYNIX INC·Filed 2014·Granted Nov 17, 2015·3 cites·20 claims
- 1259US8163614B2Method for forming NAND typed memory deviceKIM NAM-KYEONG·Filed 2010·Granted Apr 24, 2012·1 cites·11 claims
- 1358US7727839B2Method of manufacturing NAND flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jun 1, 2010·1 cites·17 claims
- 1456US12283307B2Memory control circuit providing die-level read retry table, memory package, and storage deviceSK HYNIX INC·Filed 2022·Granted Apr 22, 2025·0 cites·18 claims
- 1554US12142654B2Three-dimensional semiconductor device including a word line structure having a protruding portionSK HYNIX INC·Filed 2021·Granted Nov 12, 2024·0 cites·20 claims
- 1654US6812042B2Capacitor and method for fabricating ferroelectric memory device with the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 2, 2004·5 cites·7 claims
- 1753US8642442B2Memory device having three-dimensional gate structureKIM NAM-KYEONG·Filed 2010·Granted Feb 4, 2014·1 cites·11 claims
- 1853US8213230B2Nonvolatile memory device and method for operating the sameKIM NAM-KYEONG·Filed 2010·Granted Jul 3, 2012·1 cites·14 claims
- 1953US7944758B2Non-volatile memory device and method for copy-back thereofHYNIX SEMICONDUCTOR INC·Filed 2009·Granted May 17, 2011·2 cites·14 claims
- 2053US7851311B2Method of manufacturing non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Dec 14, 2010·0 cites·11 claims
- 2152US6063639AMethod for fabricating ferroelectric capacitor of nonvolatile semiconductor memory device using plasmaHYUNDAI ELECTRONICS IND·Filed 1999·Granted May 16, 2000·16 cites·13 claims
- 2251US6455329B1Method for fabricating a capacitor in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 24, 2002·3 cites·16 claims
- 2350US11443809B2Memory device and method of operating the sameSK HYNIX INC·Filed 2021·Granted Sep 13, 2022·0 cites·19 claims
- 2450US6812089B2Method of manufacturing ferroelectric memory deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 2, 2004·4 cites·10 claims
- 2549US6747302B2FeRAM having BLT ferroelectric layer and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 8, 2004·2 cites·18 claims
- 2648US6417012B1Method of forming ferroelectric capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jul 9, 2002·3 cites·6 claims
- 2746US8867276B2Memory device having three-dimensional gate structureMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 21, 2014·0 cites·20 claims
- 2846US2024355405A1Appratus and method for changing a read voltage applied for reading data from a non-volatile memory cellSK HYNIX INC·Filed 2023·Application pending·0 cites
- 2945US9299444B1Nonvolatile memory device with improved voltage drop and method of driving the sameSK HYNIX INC·Filed 2014·Granted Mar 29, 2016·0 cites·19 claims
- 3045US8268685B2NAND flash memory device and method of manufacturing the sameOM JAE CHUL·Filed 2011·Granted Sep 18, 2012·0 cites·6 claims
- 3144US7410881B2Method of manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 12, 2008·0 cites·19 claims
- 3242US6232133B1Method for fabricating a capacitor of semiconductor memory deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted May 15, 2001·10 cites·12 claims
- 3341US8106448B2NAND flash memory deviceOM JAE CHUL·Filed 2010·Granted Jan 31, 2012·0 cites·5 claims
- 3441US6815225B2Method for forming capacitor of nonvolatile semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 9, 2004·0 cites·16 claims
- 3540US8537616B2Nonvolatile memory device and method for operating the sameKIM NAM-KYEONG·Filed 2012·Granted Sep 17, 2013·0 cites·14 claims
- 3639US2005006683A1Capacitor and method for fabricating ferroelectric memory device with the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 3738US2007004141A1Method of manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 3837US2002079588A1Semiconductor device and method for manufacturing the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →