Inventor · disambiguated record
Naotaka Kuroda
Also filed as: KURODA NAOTAKA
13 granted patents·3 pending applications·113 citations·filing 1995–2024
91Inventor score
Top patents by PatentIndex Score
16 records- 0193US8853666B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorINOUE TAKASHI·Filed 2006·Granted Oct 7, 2014·26 cites·21 claims
- 0290US10901024B2Method for measuring current-voltage characteristicROHM CO LTD·Filed 2018·Granted Jan 26, 2021·3 cites·21 claims
- 0385US10908204B2Method for measuring current-voltage characteristicROHM CO LTD·Filed 2017·Granted Feb 2, 2021·2 cites·13 claims
- 0485US2024329111A1Method for measuring current-voltage characteristicROHM CO LTD·Filed 2024·Application pending·0 cites
- 0584US6824610B2Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrateNEC CORP·Filed 2002·Granted Nov 30, 2004·37 cites·14 claims
- 0683US9954087B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 24, 2018·5 cites·6 claims
- 0779US8198652B2Field effect transistor with reduced gate leakage currentANDO YUJI·Filed 2007·Granted Jun 12, 2012·7 cites·9 claims
- 0876US7741700B2Transistor with heat dissipating meansNEC CORP·Filed 2005·Granted Jun 22, 2010·9 cites·15 claims
- 0972US12038468B2Method for measuring current-voltage characteristicROHM CO LTD·Filed 2020·Granted Jul 16, 2024·0 cites·21 claims
- 1067US8466495B2Field effect transistor with reduced gate leakage currentANDO YUJI·Filed 2012·Granted Jun 18, 2013·2 cites·8 claims
- 1167US8063484B2Semiconductor device and heat sink with 3-dimensional thermal conductivityKURODA NAOTAKA·Filed 2007·Granted Nov 22, 2011·4 cites·9 claims
- 1264US8332190B2Circuit simulator, circuit simulation method and programTANOMURA MASAHIRO·Filed 2007·Granted Dec 11, 2012·5 cites·28 claims
- 1354US2018233590A1Field effect transistor and multilayered epitaxial film for use in preparation of field effect transistorRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 1445US5744307AMethod for measuring adenyl group-containing susbstancesMOCHIDA PHARM CO LTD·Filed 1995·Granted Apr 28, 1998·13 cites·24 claims
- 1544US8476756B2Semiconductor device and heat sink with 3-dimensional thermal conductivityKURODA NAOTAKA·Filed 2011·Granted Jul 2, 2013·0 cites·11 claims
- 1641US2009267114A1Field effect transistorNEC CORP·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →