Inventor · disambiguated record
Natalia Lavrovskaya
Also filed as: LAVROVSKAYA NATALIA
19 granted patents·2 pending applications·46 citations·filing 2005–2023
91Inventor score
Top patents by PatentIndex Score
21 records- 0190US10224402B2Method of improving lateral BJT characteristics in BCD technologyTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 5, 2019·8 cites·16 claims
- 0288US7719048B1Heating element for enhanced E2PROMNAT SEMICONDUCTOR CORP·Filed 2007·Granted May 18, 2010·13 cites·5 claims
- 0379US8247862B2Method of enhancing charge storage in an E2PROM cellBABCOCK JEFF A·Filed 2010·Granted Aug 21, 2012·8 cites·2 claims
- 0475US2023411501A1Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base regionTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 0573US11094806B2Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base regionTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 17, 2021·1 cites·20 claims
- 0672US7919807B1Non-volatile memory cell with heating elementNAT SEMICONDUCTOR CORP·Filed 2007·Granted Apr 5, 2011·4 cites·11 claims
- 0772US7919805B1Non-volatile memory cell with two capacitors and one PNP transistor and a method of forming such a cell in a 1-poly SOI technologyNAT SEMICONDUCTOR CORP·Filed 2007·Granted Apr 5, 2011·8 cites·10 claims
- 0871US12501633B2Breakdown diodes and methods of making the sameTEXAS INSTRUMENTS INC·Filed 2022·Granted Dec 16, 2025·0 cites·28 claims
- 0971US11791405B2Transistor having an emitter region with a silicide spaced apart from a base contactTEXAS INSTRUMENTS INC·Filed 2021·Granted Oct 17, 2023·0 cites·19 claims
- 1066US11588019B2Bipolar junction transistor with constricted collector region having high gain and early voltage productTEXAS INSTRUMENTS INC·Filed 2021·Granted Feb 21, 2023·0 cites·18 claims
- 1165US12113128B2DMOS transistor having thick gate oxide and STI and method of fabricatingTEXAS INSTRUMENTS INC·Filed 2021·Granted Oct 8, 2024·0 cites·29 claims
- 1262US8183621B2Non-volatile memory cell having a heating element and a substrate-based control gateBABCOCK JEFFREY A·Filed 2011·Granted May 22, 2012·1 cites·19 claims
- 1360US11217665B2Bipolar junction transistor with constricted collector region having high gain and early voltage productTEXAS INSTRUMENTS INC·Filed 2020·Granted Jan 4, 2022·0 cites·11 claims
- 1460US8207559B2Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structuresBABCOCK JEFFREY A·Filed 2009·Granted Jun 26, 2012·2 cites·2 claims
- 1557US11049967B2DMOS transistor having thick gate oxide and STI and method of fabricatingTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 29, 2021·0 cites·14 claims
- 1657US9595480B2Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistorsTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 14, 2017·0 cites·16 claims
- 1756US7425741B1EEPROM structure with improved data retention utilizing biased metal plate and conductive layer exclusionNAT SEMICONDUCTOR CORP·Filed 2005·Granted Sep 16, 2008·1 cites·9 claims
- 1854US9831135B2Method of forming a biCMOS semiconductor chip that increases the betas of the bipolar transistorsTEXAS INSTRUMENTS INC·Filed 2017·Granted Nov 28, 2017·0 cites·9 claims
- 1952US8669157B2Non-volatile memory cell having a heating element and a substrate-based control gateBABCOCK JEFFREY A·Filed 2012·Granted Mar 11, 2014·0 cites·6 claims
- 2051US11469315B2Bipolar junction transistor with biased structure between base and emitter regionsTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 11, 2022·0 cites·15 claims
- 2140US2019165129A1Fabricating transistors with a dielectric formed on a sidewall of a gate material and a gate oxide before forming silicideTEXAS INSTRUMENTS INC·Filed 2017·Application pending·0 cites
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