Inventor · disambiguated record
Natasha Lavrovskaya
Also filed as: LAVROVSKAYA NATASHA
1 granted patent·1 pending application·12 citations·filing 2007–2023
34Inventor score
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2 records- 0180US7663173B1Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storageNAT SEMICONDUCTOR CORP·Filed 2007·Granted Feb 16, 2010·12 cites·19 claims
- 0255US2025221053A1Integrated circuit device with zener diode with reduced leakage and/or increased breakdown voltageTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →