Inventor · disambiguated record
Nadia Lifshitz
Also filed as: LIFSHITZ NADIA
8 granted patents·166 citations·filing 1980–1994
88Inventor score
Files withAT & T BELL LAB2BELL TELEPHONE LABOR INC2AMERICAN TELEPHONE & TELEGRAPH1AT & T CORP1LIFSHITZ NADIA1
Top patents by PatentIndex Score
8 records- 0179US5550397AMetal oxide semiconductor transistors having a polysilicon gate electrode with nonuniform doping in source-drain directionLUCENT TECHNOLOGIES INC·Filed 1994·Granted Aug 27, 1996·47 cites·14 claims
- 0275US4450620AFabrication of MOS integrated circuit devicesBELL TELEPHONE LABOR INC·Filed 1983·Granted May 29, 1984·45 cites·19 claims
- 0364US4333793AHigh-selectivity plasma-assisted etching of resist-masked layerBELL TELEPHONE LABOR INC·Filed 1980·Granted Jun 8, 1982·25 cites·9 claims
- 0463US4978915AMethod of manufacturing semiconductor devices involving the detection of impuritiesAT & T BELL LAB·Filed 1989·Granted Dec 18, 1990·19 cites·7 claims
- 0540US5407532ASelf-aligned method of fabrication closely spaced apart metallization linesAT & T CORP·Filed 1993·Granted Apr 18, 1995·14 cites·19 claims
- 0638US4938847AMethod of manufacturing semiconductor devices, involving the detection of waterAMERICAN TELEPHONE & TELEGRAPH·Filed 1989·Granted Jul 3, 1990·9 cites·18 claims
- 0729US5166091AFabrication method in vertical integrationAT & T BELL LAB·Filed 1991·Granted Nov 24, 1992·3 cites·6 claims
- 0825US5149672AProcess for fabricating integrated circuits having shallow junctionsLIFSHITZ NADIA·Filed 1991·Granted Sep 22, 1992·4 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →