Inventor · disambiguated record
Naohiro Matsukawa
Also filed as: MATSUKAWA NAOHIRO
15 granted patents·2 pending applications·443 citations·filing 1981–2023
94Inventor score
Top patents by PatentIndex Score
17 records- 0194US5350938ANonvolatile semiconductor memory circuit with high speed read-outTOSHIBA KK·Filed 1991·Granted Sep 27, 1994·130 cites·13 claims
- 0288US9183000B2Memory systemICHIDA MAKOTO·Filed 2012·Granted Nov 10, 2015·19 cites·14 claims
- 0380US4459325ASemiconductor device and method for manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Jul 10, 1984·47 cites·18 claims
- 0479US4642881AMethod of manufacturing nonvolatile semiconductor memory device by forming additional impurity doped region under the floating gateTOSHIBA KK·Filed 1985·Granted Feb 17, 1987·58 cites·19 claims
- 0578US4592026AMemory device resistant to soft errorsTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 27, 1986·26 cites·3 claims
- 0674US5515327ANonvolatile semiconductor memory device having a small number of internal boosting circuitsTOSHIBA KK·Filed 1994·Granted May 7, 1996·35 cites·31 claims
- 0767US5650961ACell characteristic measuring circuit for a nonvolatile semiconductor memory device and cell characteristic measuring methodTOSHIBA KK·Filed 1995·Granted Jul 22, 1997·28 cites·20 claims
- 0866US4610078AMethod of making high density dielectric isolated gate MOS transistorTOSHIBA KK·Filed 1984·Granted Sep 9, 1986·19 cites·4 claims
- 0963US2023282747A1Semiconductor deviceKIOXIA CORP·Filed 2023·Application pending·0 cites
- 1060US4573143ASemiconductor memory device having tunnel diodesTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Feb 25, 1986·12 cites·7 claims
- 1155US5172196ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1989·Granted Dec 15, 1992·15 cites·16 claims
- 1254US4845530AReduced projection type step- and repeat-exposure apparatusTOSHIBA KK·Filed 1987·Granted Jul 4, 1989·11 cites·17 claims
- 1352US4620361AMethod for producing a semiconductor device with a floating gateTOSHIBA KK·Filed 1985·Granted Nov 4, 1986·13 cites·6 claims
- 1451US5559736ANon-volatile semiconductor memory device capable of preventing excessive-writingTOSHIBA KK·Filed 1995·Granted Sep 24, 1996·13 cites·33 claims
- 1551US4419142AMethod of forming dielectric isolation of device regionsTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Dec 6, 1983·16 cites·13 claims
- 1649US2020203529A1Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Application pending·0 cites
- 1747US8400833B2Method of evaluating a semiconductor storage deviceMATSUKAWA NAOHIRO·Filed 2011·Granted Mar 19, 2013·1 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Naohiro Matsukawa files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →