Inventor · disambiguated record
Naoya Miyoshi
Also filed as: MIYOSHI NAOYA
8 granted patents·8 pending applications·6 citations·filing 2011–2019
75Inventor score
Top patents by PatentIndex Score
16 records- 0189US8568532B2Method for growing single crystal of group III metal nitride and reaction vessel for use in sameIWAI MAKOTO·Filed 2011·Granted Oct 29, 2013·4 cites·22 claims
- 0281US9732435B2Group 13 nitride crystal and group 13 nitride crystal substrateHAYASHI MASAHIRO·Filed 2012·Granted Aug 15, 2017·2 cites·10 claims
- 0363US11718927B2Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or moreSUMITOMO CHEMICAL CO·Filed 2019·Granted Aug 8, 2023·0 cites·3 claims
- 0461US2017204534A1Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystalHAYASHI MASAHIRO·Filed 2017·Application pending·0 cites
- 0560US9863058B2Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing methodHAYASHI MASAHIRO·Filed 2015·Granted Jan 9, 2018·0 cites·13 claims
- 0656US10100426B2Method for producing gallium nitride crystalSATOH TAKASHI·Filed 2014·Granted Oct 16, 2018·0 cites·12 claims
- 0753US2013065036A1Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystalHAYASHI MASAHIRO·Filed 2012·Application pending·0 cites
- 0852US2014271439A1Group 13 nitride crystal and method for production of group 13 nitride crystalWADA JUNICHI·Filed 2014·Application pending·0 cites
- 0948US9404196B2Manufacturing method of group 13 nitride crystalHAYASHI MASAHIRO·Filed 2012·Granted Aug 2, 2016·0 cites·8 claims
- 1046US2013243680A1Group 13 nitride crystal and group 13 nitride crystal substrateHAYASHI MASAHIRO·Filed 2013·Application pending·0 cites
- 1146US2013065010A1Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing methodHAYASHI MASAHIRO·Filed 2012·Application pending·0 cites
- 1243US2018163323A1Method for producing group 13 nitride single crystal and apparatus for producing group 13 nitride single crystalSATOH TAKASHI·Filed 2018·Application pending·0 cites
- 1339US2014077218A1Group 13 nitride crystal, group 13 nitride crystal substrate, and method of manufacturing group 13 nitride crystalHAYASHI MASAHIRO·Filed 2013·Application pending·0 cites
- 1438US2014261157A1Method for producing group 13 nitride crystal and apparatus for producing the sameSATOH TAKASHI·Filed 2014·Application pending·0 cites
- 1537US9123863B2Group 13 nitride crystal and substrate thereofHAYASHI MASAHIRO·Filed 2012·Granted Sep 1, 2015·0 cites·8 claims
- 1636US10538858B2Method for manufacturing group 13 nitride crystal and group 13 nitride crystalSCIOCS CO LTD·Filed 2015·Granted Jan 21, 2020·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →