Inventor · disambiguated record
Naohiro Nishikawa
Also filed as: NISHIKAWA NAOHIRO
18 granted patents·12 pending applications·60 citations·filing 2001–2023
91Inventor score
Files withSUMITOMO CHEMICAL CO12RENESAS ELECTRONICS CORP8NISHIKAWA NAOHIRO4HATA MASAHIKO1HITACHI LTD1
Top patents by PatentIndex Score
30 records- 0190US8053811B2Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor elementSUMITOMO CHEMICAL CO·Filed 2006·Granted Nov 8, 2011·19 cites·10 claims
- 0286US7913257B2Scheduling method, scheduling apparatus and multiprocessor systemSONY COMPUTER ENTERTAINMENT INC·Filed 2005·Granted Mar 22, 2011·16 cites·13 claims
- 0372US10198301B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Feb 5, 2019·1 cites·12 claims
- 0470US9559196B2Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic deviceSUMITOMO CHEMICAL CO·Filed 2012·Granted Jan 31, 2017·2 cites·18 claims
- 0565US8793695B2Information processing device and information processing methodNISHIKAWA NAOHIRO·Filed 2009·Granted Jul 29, 2014·4 cites·10 claims
- 0665US8350292B2Gallium nitride epitaxial crystal, method for production thereof, and field effect transistorSUMITOMO CHEMICAL CO·Filed 2008·Granted Jan 8, 2013·2 cites·13 claims
- 0765US8166482B2Scheduling method, scheduling apparatus and multiprocessor systemNISHIKAWA NAOHIRO·Filed 2011·Granted Apr 24, 2012·2 cites·6 claims
- 0863US2025277306A1Diamond film-deposited substrate and method for manufacturing diamond film-deposited substrateSUMITOMO CHEMICAL CO·Filed 2023·Application pending·0 cites
- 0961US7951685B2Method for manufacturing semiconductor epitaxial crystal substrateSUMITOMO CHEMICAL CO·Filed 2007·Granted May 31, 2011·1 cites·8 claims
- 1061US6587901B2Information processing system, portable electronic equipment and information processing apparatusHITACHI LTD·Filed 2001·Granted Jul 1, 2003·12 cites·17 claims
- 1160US10340375B2Epitaxial substrate for field effect transistorHATA MASAHIKO·Filed 2008·Granted Jul 2, 2019·1 cites·9 claims
- 1258US10200741B2Content output device and programRENESAS ELECTRONICS CORP·Filed 2017·Granted Feb 5, 2019·0 cites·20 claims
- 1357US10642768B2Semiconductor device and control method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted May 5, 2020·0 cites·5 claims
- 1456US9854295B2Content output device and programRENESAS ELECTRONICS CORP·Filed 2017·Granted Dec 26, 2017·0 cites·22 claims
- 1556US9723355B2Content output device and programRENESAS ELECTRONICS CORP·Filed 2016·Granted Aug 1, 2017·0 cites·20 claims
- 1652US10191872B2Semiconductor device and control method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Jan 29, 2019·0 cites·21 claims
- 1752US10067806B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 4, 2018·0 cites·20 claims
- 1850US9521450B2Content output device and programRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 13, 2016·0 cites·17 claims
- 1948US2007245218A1Semiconductor integrated circuit and record playerRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 2044US2007046508A1Sampling rate converter and a semiconductor integrated circuitNISHIKAWA NAOHIRO·Filed 2006·Application pending·0 cites
- 2144US2009093122A1Method For Producing Group III-V Nitride Semiconductor SubstrateSUMITOMO CHEMICAL CO·Filed 2007·Application pending·0 cites
- 2242US2009236629A1Sustrate and Semiconductor Light-Emitting DeviceSUMITOMO CHEMICAL CO·Filed 2006·Application pending·0 cites
- 2342US2011042719A1Semiconductor device and method of manufacturing a semiconductor deviceSUMITOMO CHEMICAL CO·Filed 2009·Application pending·0 cites
- 2442US2011108885A1Semiconductor device and method of manufacturing a semiconductor deviceSUMITOMO CHEMICAL CO·Filed 2009·Application pending·0 cites
- 2541US2009008652A1Free-Standing Substrate, Method for Producing the Same and Semiconductor Light-Emitting DeviceSUMITOMO CHEMICAL CO·Filed 2006·Application pending·0 cites
- 2640US2008087881A1Semiconductor Multilayer Substrate, Method For Producing Same And Light-Emitting DeviceUEDA KAZUMASA·Filed 2005·Application pending·0 cites
- 2740US2004174786A1Information processing apparatus and information processing methodFiled 2004·Application pending·0 cites
- 2838US2006075959A1Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgalliumSUMITOMO CHEMICAL CO·Filed 2005·Application pending·0 cites
- 2937US9761686B2Semiconductor wafer, method of producing semiconductor wafer, and heterojunction bipolar transistorSUMITOMO CHEMICAL CO·Filed 2016·Granted Sep 12, 2017·0 cites·6 claims
- 3037US2012068224A1Method of producing semiconductor wafer, and semiconductor waferNISHIKAWA NAOHIRO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →