Inventor · disambiguated record
Nagatoshi Ooki
Also filed as: OOKI NAGATOSHI
9 granted patents·3 pending applications·243 citations·filing 2001–2020
89Inventor score
Files withRENESAS ELECTRONICS CORP4RENESAS TECH CORP4HITACHI JOHNSON CONTROLS AIR CONDITIONING INC2HITACHI ULSI SYS CO LTD1SHIMIZU AKIHIRO1
Top patents by PatentIndex Score
12 records- 0197US7115954B2Semiconductor device including stress inducing films formed over n-channel and p-channel field effect transistors and a method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Oct 3, 2006·118 cites·27 claims
- 0293US7105394B2Semiconductor device and a method of manufacturing the sameHITACHI ULSI SYS CO LTD·Filed 2002·Granted Sep 12, 2006·100 cites·21 claims
- 0391US7411253B2CMOS transistors using gate electrodes to increase channel mobilities by inducing localized channel stressRENESAS TECH CORP·Filed 2006·Granted Aug 12, 2008·11 cites·21 claims
- 0485US7414293B2Structure and method of applying localized stresses to the channels of PFET and NFET transistors for improved performanceRENESAS TECH CORP·Filed 2006·Granted Aug 19, 2008·6 cites·6 claims
- 0581US11022372B2Air conditionerHITACHI JOHNSON CONTROLS AIR CONDITIONING INC·Filed 2018·Granted Jun 1, 2021·2 cites·8 claims
- 0681US8963250B2Semiconductor device including a film for applying stress to a channel formation region to increase current flowSHIMIZU AKIHIRO·Filed 2008·Granted Feb 24, 2015·4 cites·19 claims
- 0775US7705402B2Semiconductor device including a nitride containing film to generate stress for improving current driving capacity of a field effect transistorRENESAS TECH CORP·Filed 2008·Granted Apr 27, 2010·2 cites·12 claims
- 0873US2020185523A1Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 0964US2018269323A1Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 1062US9978869B2P-channel transistor having an increased channel mobility due to a compressive stress-inducing gate electrodeRENESAS ELECTRONICS CORP·Filed 2016·Granted May 22, 2018·0 cites·6 claims
- 1160US9412669B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 9, 2016·0 cites·13 claims
- 1248US2019120556A1Outdoor device and refrigeration cycle deviceHITACHI JOHNSON CONTROLS AIR CONDITIONING INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →