Inventor · disambiguated record
Nace Rossi
Also filed as: ROSSI NACE · ROSSI NACE M
25 granted patents·8 pending applications·95 citations·filing 2004–2011
94Inventor score
Top patents by PatentIndex Score
33 records- 0187US7141486B1Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structuresAGERE SYSTEMS INC·Filed 2005·Granted Nov 28, 2006·15 cites·25 claims
- 0286US7982286B2Method to improve metal defects in semiconductor device fabricationAGERE SYSTEMS INC·Filed 2006·Granted Jul 19, 2011·11 cites·23 claims
- 0384US8372723B2Bipolar device having buried contactsAGERE SYSTEMS LLC·Filed 2011·Granted Feb 12, 2013·7 cites·10 claims
- 0479US7247556B2Control of wafer warpage during backend processingAGERE SYSTEMS INC·Filed 2005·Granted Jul 24, 2007·9 cites·11 claims
- 0578US8049282B2Bipolar device having buried contactsAGERE SYSTEMS INC·Filed 2006·Granted Nov 1, 2011·7 cites·16 claims
- 0677US7557010B2Method to improve writer leakage in a SiGe bipolar deviceAGERE SYSTEMS INC·Filed 2007·Granted Jul 7, 2009·13 cites·24 claims
- 0775US7923340B2Method to reduce collector resistance of a bipolar transistor and integration into a standard CMOS flowAGERE SYSTEMS INC·Filed 2007·Granted Apr 12, 2011·7 cites·18 claims
- 0872US7906407B2Shallow trench isolation structures and a method for forming shallow trench isolation structuresAGERE SYSTEMS INC·Filed 2007·Granted Mar 15, 2011·4 cites·57 claims
- 0969US7439119B2Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the methodAGERE SYSTEMS INC·Filed 2006·Granted Oct 21, 2008·3 cites·7 claims
- 1066US7279393B2Trench isolation structure and method of manufacture thereforAGERE SYSTEMS INC·Filed 2004·Granted Oct 9, 2007·12 cites·13 claims
- 1163US7811944B2Semiconductor device and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2005·Granted Oct 12, 2010·1 cites·8 claims
- 1263US7514336B2Robust shallow trench isolation structures and a method for forming shallow trench isolation structuresAGERE SYSTEMS INC·Filed 2005·Granted Apr 7, 2009·1 cites·7 claims
- 1359US7005724B2Semiconductor device and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2004·Granted Feb 28, 2006·5 cites·16 claims
- 1458US8022481B2Robust shallow trench isolation structures and a method for forming shallow trench isolation structuresAGERE SYSTEMS INC·Filed 2009·Granted Sep 20, 2011·0 cites·5 claims
- 1553US7776678B2Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the methodAGERE SYSTEMS INC·Filed 2008·Granted Aug 17, 2010·0 cites·9 claims
- 1649US7675179B2Device and method to eliminate shorting induced by via to metal misalignmentAGERE SYSTEMS INC·Filed 2007·Granted Mar 9, 2010·0 cites·14 claims
- 1749US2008079083A1Semiconductor device and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2007·Application pending·0 cites
- 1848US8084313B2Method for forming a bipolar junction transistor and a metal oxide semiconductor field effect transistorNANDA ARUN K·Filed 2010·Granted Dec 27, 2011·0 cites·9 claims
- 1948US7666750B2Bipolar device having improved capacitanceAGERE SYSTEMS INC·Filed 2006·Granted Feb 23, 2010·0 cites·8 claims
- 2047US7456061B2Method to reduce boron penetration in a SiGe bipolar deviceAGERE SYSTEMS INC·Filed 2007·Granted Nov 25, 2008·0 cites·13 claims
- 2147US2009050977A1METHOD TO REDUCE BORON PENETRATION IN A SiGe BIPOLAR DEVICEAGERE SYSTEMS INC·Filed 2008·Application pending·0 cites
- 2246US7479438B2Method to improve performance of a bipolar device using an amorphizing implantAGERE SYSTEMS INC·Filed 2006·Granted Jan 20, 2009·0 cites·23 claims
- 2345US2009139962A1Methods and systems for controlling accumulation of electrical charge during semiconductor etching processesWANG EDWARD AIGUO·Filed 2007·Application pending·0 cites
- 2444US2009108359A1A semiconductor device and method of manufacture thereforAGERE SYSTEMS INC·Filed 2007·Application pending·0 cites
- 2542US2010264478A1Method to reduce trench capacitor leakage for random access memory deviceAGERE SYSTEMS INC·Filed 2007·Application pending·0 cites
- 2640US8106480B2Bipolar device having improved capacitanceCHEN ALAN S·Filed 2010·Granted Jan 31, 2012·0 cites·8 claims
- 2740US2007066074A1Shallow trench isolation structures and a method for forming shallow trench isolation structuresROSSI NACE·Filed 2005·Application pending·0 cites
- 2839US7898038B2Method to improve writer leakage in SiGe bipolar deviceAGERE SYSTEMS INC·Filed 2009·Granted Mar 1, 2011·0 cites·10 claims
- 2939US7235489B2Device and method to eliminate shorting induced by via to metal misalignmentAGERE SYSTEMS INC·Filed 2004·Granted Jun 26, 2007·0 cites·11 claims
- 3039US2007278539A1Junction field effect transistor and method for manufactureAGERE SYSTEMS INC·Filed 2006·Application pending·0 cites
- 3139US2005269709A1Interconnect structure including tungsten nitride and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2004·Application pending·0 cites
- 3235US8872311B2Semiconductor device and a method of manufacture thereforROSSI NACE·Filed 2004·Granted Oct 28, 2014·0 cites·7 claims
- 3331US8685861B2Integrated circuit system with contact distribution filmYONG CHIH PING·Filed 2006·Granted Apr 1, 2014·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →