Inventor · disambiguated record
Nak-Jin Son
Also filed as: SON NAK JIN
16 granted patents·1 pending application·135 citations·filing 2002–2021
92Inventor score
Top patents by PatentIndex Score
17 records- 0194US9012321B1Method of manufacturing semiconductor deviceKIM DAE-IK·Filed 2014·Granted Apr 21, 2015·18 cites·20 claims
- 0291US7223649B2Method of fabricating transistor of DRAM semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 29, 2007·59 cites·61 claims
- 0389US11094800B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·4 cites·20 claims
- 0488US9159730B2Methods for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 13, 2015·11 cites·20 claims
- 0586US9123550B2Semiconductor devices using air spaces to separate conductive structures and methods of manufacturing the sameSON NAK-JIN·Filed 2013·Granted Sep 1, 2015·13 cites·19 claims
- 0686US7221023B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 22, 2007·11 cites·9 claims
- 0784US7524733B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 28, 2009·9 cites·11 claims
- 0882US9564340B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 7, 2017·5 cites·20 claims
- 0963US11715786B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·9 claims
- 1063US9548260B2Semiconductor devices including conductive plugSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 17, 2017·1 cites·14 claims
- 1160US7268043B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 11, 2007·1 cites·2 claims
- 1249US7833864B2Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 16, 2010·0 cites·23 claims
- 1349US6869891B2Semiconductor device having groove and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 22, 2005·2 cites·12 claims
- 1448US7259069B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 21, 2007·0 cites·11 claims
- 1546US9466703B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 11, 2016·0 cites·20 claims
- 1643US7009255B2Semiconductor device having punch-through structure off-setting the edge of the gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 7, 2006·1 cites·22 claims
- 1731US2016056268A1Method for fabricating semiconductor device improving the process speedSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →