Inventor · disambiguated record
Naohiro Sugiyama
Also filed as: SUGIYAMA NAOHIRO
15 granted patents·1 pending application·347 citations·filing 1996–2017
93Inventor score
Files withDENSO CORP10MALHAN RAJESH KUMAR2TOYODA CHUO KENKYUSHO KK2NIPPON DENSO CO1TAKEUCHI YUUICHI1
Top patents by PatentIndex Score
16 records- 0191US6451112B1Method and apparatus for fabricating high quality single crystalDENSO CORP·Filed 2000·Granted Sep 17, 2002·47 cites·27 claims
- 0289US5944890AMethod of producing single crystals and a seed crystal used in the methodDENSO CORP·Filed 1997·Granted Aug 31, 1999·70 cites·21 claims
- 0388US6214108B1Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the sameTOYODA CHUO KENKYUSHO KK·Filed 1999·Granted Apr 10, 2001·61 cites·31 claims
- 0487US8194392B2Ceramic material and electronic deviceMALHAN RAJESH KUMAR·Filed 2010·Granted Jun 5, 2012·7 cites·23 claims
- 0587US6786969B2Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystalDENSO CORP·Filed 2001·Granted Sep 7, 2004·31 cites·9 claims
- 0682US5895526AProcess for growing single crystalNIPPON DENSO CO·Filed 1996·Granted Apr 20, 1999·50 cites·6 claims
- 0777US8604540B2Semiconductor device and method of manufacturing the sameMALHAN RAJESH KUMAR·Filed 2010·Granted Dec 10, 2013·5 cites·25 claims
- 0875US9450068B2Method for manufacturing silicon carbide semiconductor deviceDENSO CORP·Filed 2013·Granted Sep 20, 2016·3 cites·5 claims
- 0975US5964944AMethod of producing silicon carbide single crystalTOYODA CHUO KENKYUSHO KK·Filed 1997·Granted Oct 12, 1999·50 cites·9 claims
- 1063US7135074B2Method for manufacturing silicon carbide single crystal from dislocation control seed crystalDENSO CORP·Filed 2004·Granted Nov 14, 2006·19 cites·27 claims
- 1156US7217323B2Equipment and method for manufacturing silicon carbide single crystalDENSO CORP·Filed 2004·Granted May 15, 2007·4 cites·42 claims
- 1247US10490635B2Semiconductor substrate made of silicon carbide and method for manufacturing sameDENSO CORP·Filed 2017·Granted Nov 26, 2019·0 cites·12 claims
- 1343US9412831B2Manufacturing method for silicon carbide semiconductor deviceDENSO CORP·Filed 2013·Granted Aug 9, 2016·0 cites·10 claims
- 1436US8373209B2Semiconductor device having D mode JFET and E mode JFET and method for manufacturing the sameDENSO CORP·Filed 2010·Granted Feb 12, 2013·0 cites·27 claims
- 1535US2011156052A1Semiconductor device having JFET and method for manufacturing the sameDENSO CORP·Filed 2010·Application pending·0 cites
- 1632US8575648B2Silicon carbide semiconductor device and method of manufacturing the sameTAKEUCHI YUUICHI·Filed 2010·Granted Nov 5, 2013·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →