Inventor · disambiguated record
Naoyoshi Tamura
Also filed as: TAMURA NAOYOSHI
54 granted patents·6 pending applications·464 citations·filing 1995–2020
98Inventor score
Files withTAMURA NAOYOSHI16FUJITSU LTD12FUJITSU SEMICONDUCTOR LTD10FUJITSU MICROELECTRONICS LTD8MOLEX LLC5
Top patents by PatentIndex Score
60 records- 0198US7667227B2Semiconductor device and fabrication method thereofFUJITSU MICROELECTRONICS LTD·Filed 2009·Granted Feb 23, 2010·77 cites·4 claims
- 0296US8853673B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Oct 7, 2014·15 cites·4 claims
- 0395US7649232B2P-channel MOS transistor, semiconductor integrated circuit device and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Jan 19, 2010·37 cites·13 claims
- 0494US9112027B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Aug 18, 2015·9 cites·18 claims
- 0594US7875521B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Jan 25, 2011·23 cites·6 claims
- 0694US7791064B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Sep 7, 2010·18 cites·10 claims
- 0793US7378305B2Semiconductor integrated circuit and fabrication process thereofFUJITSU LTD·Filed 2005·Granted May 27, 2008·27 cites·9 claims
- 0893US7202120B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Apr 10, 2007·23 cites·4 claims
- 0991US7579617B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Aug 25, 2009·18 cites·11 claims
- 1090US8247284B2Manufacture of semiconductor device with stress structureTAMURA NAOYOSHI·Filed 2011·Granted Aug 21, 2012·9 cites·14 claims
- 1188US8740477B2Hybrid connectorTAMURA NAOYOSHI·Filed 2010·Granted Jun 3, 2014·10 cites·20 claims
- 1288US8466450B2Semiconductor device and fabrication method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Jun 18, 2013·6 cites·7 claims
- 1388US7816766B2Semiconductor device with compressive and tensile stressesFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Oct 19, 2010·16 cites·12 claims
- 1487US8338831B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2010·Granted Dec 25, 2012·10 cites·20 claims
- 1587US7683362B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Mar 23, 2010·13 cites·19 claims
- 1686US8269256B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2008·Granted Sep 18, 2012·11 cites·10 claims
- 1786US7626215B2Semiconductor device and method of manufacturing the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Dec 1, 2009·9 cites·12 claims
- 1886US7262465B2P-channel MOS transistor and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Aug 28, 2007·13 cites·7 claims
- 1985US8586438B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2012·Granted Nov 19, 2013·8 cites·20 claims
- 2085US7518188B2P-channel MOS transistor and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 14, 2009·10 cites·9 claims
- 2183US7968414B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Jun 28, 2011·6 cites·9 claims
- 2282US8519486B2Semiconductor device having a plurality of phosphorus-doped silicon carbide layersTAMURA NAOYOSHI·Filed 2010·Granted Aug 27, 2013·4 cites·10 claims
- 2380US7432180B2Method of fabricating a nickel silicide layer by conducting a thermal annealing process in a silane gasFUJITSU LTD·Filed 2006·Granted Oct 7, 2008·7 cites·14 claims
- 2478US9865734B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Jan 9, 2018·1 cites·21 claims
- 2578US8502284B2Semiconductor device and method of manufacturing semiconductor deviceTAMURA NAOYOSHI·Filed 2009·Granted Aug 6, 2013·6 cites·18 claims
- 2670US9577309B2High-frequency wave transmitting device including a connecting portion for connecting a waveguide to an antennaMOLEX LLC·Filed 2014·Granted Feb 21, 2017·2 cites·7 claims
- 2770US8164085B2Semiconductor device and production method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Apr 24, 2012·2 cites·15 claims
- 2870US6215163B1Semiconductor device and method of manufacturing the same where the nitrogen concentration in an oxynitride insulating layer is variedFUJITSU LTD·Filed 1997·Granted Apr 10, 2001·36 cites·8 claims
- 2969US8134189B2Semiconductor device and method of manufacturing the sameTAMURA NAOYOSHI·Filed 2008·Granted Mar 13, 2012·3 cites·6 claims
- 3068US8232180B2Manufacturing method of semiconductor device comprising active region divided by STI element isolation structureTAMURA NAOYOSHI·Filed 2010·Granted Jul 31, 2012·2 cites·7 claims
- 3167US8207042B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2009·Granted Jun 26, 2012·2 cites·11 claims
- 3267US7821077B2Semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Oct 26, 2010·3 cites·13 claims
- 3366US8518785B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2012·Granted Aug 27, 2013·1 cites·8 claims
- 3465US8278177B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2011·Granted Oct 2, 2012·1 cites·8 claims
- 3563US7476941B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 13, 2009·2 cites·12 claims
- 3662US9577098B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Feb 21, 2017·0 cites·19 claims
- 3762US9214524B2Method of manufacturing a semiconductor deviceTAMURA NAOYOSHI·Filed 2012·Granted Dec 15, 2015·1 cites·9 claims
- 3860US10147993B2Connecting deviceMOLEX LLC·Filed 2015·Granted Dec 4, 2018·2 cites·15 claims
- 3960US9401427B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2015·Granted Jul 26, 2016·0 cites·18 claims
- 4059US9431285B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Aug 30, 2016·2 cites·16 claims
- 4159US7361613B2Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation methodFUJITSU LTD·Filed 2006·Granted Apr 22, 2008·1 cites·4 claims
- 4257US8765560B2Method for manufacturing semiconductor device with multiple carbon and phosphorus ion implantsFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Jul 1, 2014·0 cites·5 claims
- 4355US8071435B2Manufacture of semiconductor device with stress structureTAMURA NAOYOSHI·Filed 2009·Granted Dec 6, 2011·0 cites·14 claims
- 4454US8501571B2Method of manufacturing semiconductor device having silicon carbide layers containing phosphorusTAMURA NAOYOSHI·Filed 2012·Granted Aug 6, 2013·0 cites·5 claims
- 4554US7968920B2Semiconductor device and manufacturing method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted Jun 28, 2011·0 cites·8 claims
- 4654US5940722AMethod of manufacturing a semiconductor comprising an oxygen-containing silicon waferFUJITSU LTD·Filed 1995·Granted Aug 17, 1999·18 cites·11 claims
- 4751US8247283B2Manufacture of semiconductor device with stress structureTAMURA NAOYOSHI·Filed 2011·Granted Aug 21, 2012·0 cites·6 claims
- 4851US8158498B2P-channel MOS transistor and fabrication process thereofSHIMA MASASHI·Filed 2009·Granted Apr 17, 2012·0 cites·6 claims
- 4951US2020203854A1Cable assembly, cable holder, and production method for cable assemblyMOLEX LLC·Filed 2019·Application pending·0 cites
- 5050US8741721B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2011·Granted Jun 3, 2014·0 cites·8 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →