Inventor · disambiguated record
Naozumi Terada
Also filed as: TERADA NAOZUMI
6 granted patents·1 pending application·0 citations·filing 2009–2023
64Inventor score
Files withTOSHIBA KK7
Top patents by PatentIndex Score
7 records- 0165US12250813B2Method of forming memory transistor with sacrificial polysilicon layerTOSHIBA KK·Filed 2023·Granted Mar 11, 2025·0 cites·7 claims
- 0261US12279424B2Semiconductor device and manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2022·Granted Apr 15, 2025·0 cites·7 claims
- 0342US11121264B2Junction field effect transistorTOSHIBA KK·Filed 2019·Granted Sep 14, 2021·0 cites·17 claims
- 0440US11355495B2Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Jun 7, 2022·0 cites·10 claims
- 0540US10818656B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Oct 27, 2020·0 cites·4 claims
- 0638US2009184364A1Non-volatile semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Application pending·0 cites
- 0732US10497790B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Dec 3, 2019·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →