Inventor · disambiguated record
Naoaki Yamaguchi
Also filed as: YAMAGUCHI NAOAKI
64 granted patents·1 pending application·5,647 citations·filing 1994–2019
99Inventor score
Files withSEMICONDUCTOR ENERGY LAB6124M TECHNOLOGIES INC1HITACHI LTD1KONUMA TOSHIMITSU1ZHANG HONGYONG1
Top patents by PatentIndex Score
65 records- 0199US5648277AMethod of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jul 15, 1997·419 cites·7 claims
- 0299US5508209AMethod for fabricating thin film transistor using anodic oxidationSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Apr 16, 1996·290 cites·18 claims
- 0398US10115970B2Semi-solid electrodes with porous current collectors and methods of manufacture24M TECHNOLOGIES INC·Filed 2016·Granted Oct 30, 2018·85 cites·18 claims
- 0498US7569856B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Aug 4, 2009·56 cites·23 claims
- 0598US7381599B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Jun 3, 2008·69 cites·39 claims
- 0698US5962872ASemiconductor device and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Oct 5, 1999·220 cites·18 claims
- 0798US5815226AElectro-optical device and method of fabricating sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Sep 29, 1998·236 cites·17 claims
- 0897US6259120B1Semiconductor device and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Jul 10, 2001·155 cites·17 claims
- 0997US6096581AMethod for operating an active matrix display device with limited variation in threshold voltagesSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Aug 1, 2000·158 cites·60 claims
- 1097US6049092ASemiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Apr 11, 2000·194 cites·27 claims
- 1197US5756364ALaser processing method of semiconductor device using a catalystSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted May 26, 1998·312 cites·6 claims
- 1297US5612250AMethod for manufacturing a semiconductor device using a catalystSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Mar 18, 1997·318 cites·1 claims
- 1397US5543352AMethod for manufacturing a semiconductor device using a catalystSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Aug 6, 1996·341 cites·20 claims
- 1496US7525158B2Semiconductor device having pixel electrode and peripheral circuitSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Apr 28, 2009·69 cites·22 claims
- 1596US6218678B1Semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Apr 17, 2001·116 cites·39 claims
- 1696US6097454ADisplay deviceSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Aug 1, 2000·189 cites·15 claims
- 1796US5982460AElectro-optical displaySEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Nov 9, 1999·134 cites·12 claims
- 1896US5929948ABlack matrix coupled to common electrode through a transparent conductive filmSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Jul 27, 1999·144 cites·6 claims
- 1996US5605846AMethod for manufacturing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Feb 25, 1997·349 cites·26 claims
- 2095US6867431B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Mar 15, 2005·150 cites·28 claims
- 2195US6475839B2Manufacturing of TFT device by backside laser irradiationSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Nov 5, 2002·71 cites·31 claims
- 2295US6118506AElectro-optical device and method of fabricating sameSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Sep 12, 2000·148 cites·18 claims
- 2394US7635895B2Display deviceSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted Dec 22, 2009·20 cites·30 claims
- 2494US7183614B2Semiconductor device and method of manufacture thereofSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Feb 27, 2007·21 cites·18 claims
- 2594US6617612B2Semiconductor device and a semiconductor integrated circuitSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Sep 9, 2003·66 cites·29 claims
- 2694US6507069B1Semiconductor device and method of manufacture thereofSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Jan 14, 2003·80 cites·6 claims
- 2793US6059873AOptical processing method with control of the illumination energy of laser lightSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted May 9, 2000·73 cites·29 claims
- 2893US6005648ADisplay deviceSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Dec 21, 1999·115 cites·5 claims
- 2992US8198683B2Semiconductor device including transistors with silicided impurity regionsKONUMA TOSHIMITSU·Filed 2010·Granted Jun 12, 2012·8 cites·24 claims
- 3092US5620906AMethod for producing semiconductor device by introducing hydrogen ionsSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Apr 15, 1997·98 cites·13 claims
- 3191US6906383B1Semiconductor device and method of manufacture thereofSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Jun 14, 2005·45 cites·61 claims
- 3291US6773971B1Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regionsSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Aug 10, 2004·85 cites·14 claims
- 3390US6982768B2Liquid crystal display deviceSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Jan 3, 2006·43 cites·10 claims
- 3489US6723590B1Method for laser-processing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Apr 20, 2004·43 cites·70 claims
- 3589US6194255B1Method for manufacturing thin-film transistorsSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Feb 27, 2001·81 cites·12 claims
- 3688US6198517B1Liquid crystal display deviceSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Mar 6, 2001·67 cites·20 claims
- 3786US7847355B2Semiconductor device including transistors with silicided impurity regionsSEMICONDUCTOR ENERGY LAB·Filed 2009·Granted Dec 7, 2010·6 cites·27 claims
- 3885US6246453B1Electro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Jun 12, 2001·50 cites·15 claims
- 3984US6777763B1Semiconductor device and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Aug 17, 2004·49 cites·33 claims
- 4084US6509212B1Method for laser-processing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Jan 21, 2003·49 cites·44 claims
- 4184US6008101ALaser processing method of semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Dec 28, 1999·68 cites·16 claims
- 4283US7206053B2Electro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Apr 17, 2007·4 cites·9 claims
- 4382US6336969B1Optical processing apparatus and optical processing methodSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Jan 8, 2002·34 cites·38 claims
- 4482US5897346AMethod for producing a thin film transistorSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Apr 27, 1999·61 cites·62 claims
- 4582US5736414AMethod for manufacturing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Apr 7, 1998·51 cites·11 claims
- 4681US6709906B2Method for producing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Mar 23, 2004·18 cites·18 claims
- 4780US8273613B2Semiconductor device and method of manufacture thereofZHANG HONGYONG·Filed 2009·Granted Sep 25, 2012·5 cites·30 claims
- 4880US6716283B2Optical processing apparatus and optical processing methodSEMICONDUCTOR ENERGY LAB·Filed 2002·Granted Apr 6, 2004·11 cites·18 claims
- 4979US5926735AMethod of forming semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Jul 20, 1999·42 cites·11 claims
- 5075US6884698B1Method for manufacturing semiconductor device with crystallization of amorphous siliconSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Apr 26, 2005·35 cites·22 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →