Inventor · disambiguated record
Natsuki Yoshida
Also filed as: YOSHIDA NATSUKI
4 granted patents·20 citations·filing 1984–2020
67Inventor score
Top patents by PatentIndex Score
4 records- 0185US11972949B2SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Apr 30, 2024·2 cites·9 claims
- 0259US4632550AMeasuring method for a time resolved emission spectrum or a time resolved excitation spectrumHORIBA LTD·Filed 1984·Granted Dec 30, 1986·18 cites·3 claims
- 0357US12065758B2Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Aug 20, 2024·0 cites·9 claims
- 0451US12451348B2Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Oct 21, 2025·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →