Inventor · disambiguated record
Neville L. Dias
Also filed as: DIAS NEVILLE · DIAS NEVILLE L
17 granted patents·1 pending application·14 citations·filing 2013–2020
88Inventor score
Top patents by PatentIndex Score
18 records- 0183US9947585B2Multi-gate transistor with variably sized finINTEL CORP·Filed 2014·Granted Apr 17, 2018·5 cites·24 claims
- 0281US10756210B2Depletion mode gate in ultrathin FINFET based architectureINTEL CORP·Filed 2016·Granted Aug 25, 2020·3 cites·10 claims
- 0378US10192969B2Transistor gate metal with laterally graduated work functionINTEL CORP·Filed 2014·Granted Jan 29, 2019·4 cites·11 claims
- 0469US10854607B2Isolation well doping with solid-state diffusion sources for finFET architecturesINTEL CORP·Filed 2020·Granted Dec 1, 2020·0 cites·20 claims
- 0568US10964690B2Resistor between gates in self-aligned gate edge architectureINTEL CORP·Filed 2017·Granted Mar 30, 2021·1 cites·20 claims
- 0667US10811751B2Monolithic splitter using re-entrant poly silicon waveguidesINTEL CORP·Filed 2016·Granted Oct 20, 2020·1 cites·25 claims
- 0764US10643999B2Doping with solid-state diffusion sources for finFET architecturesINTEL CORP·Filed 2019·Granted May 5, 2020·0 cites·15 claims
- 0858US10340273B2Doping with solid-state diffusion sources for finFET architecturesINTEL CORP·Filed 2017·Granted Jul 2, 2019·0 cites·16 claims
- 0957US10090304B2Isolation well doping with solid-state diffusion sources for FinFET architecturesHAFEZ WALID M·Filed 2013·Granted Oct 2, 2018·0 cites·18 claims
- 1055US2019097057A1Non-linear fin-based devicesINTEL CORP·Filed 2018·Application pending·0 cites
- 1152US10761264B2Transmission lines using bending fins from local stressINTEL CORP·Filed 2016·Granted Sep 1, 2020·0 cites·25 claims
- 1252US10164115B2Non-linear fin-based devicesINTEL CORP·Filed 2014·Granted Dec 25, 2018·0 cites·22 claims
- 1349US10854757B2FINFET based junctionless wrap around structureINTEL CORP·Filed 2016·Granted Dec 1, 2020·0 cites·20 claims
- 1448US10763209B2MOS antifuse with void-accelerated breakdownINTEL CORP·Filed 2014·Granted Sep 1, 2020·0 cites·21 claims
- 1546US11075286B2Hybrid finfet structure with bulk source/drain regionsINTEL CORP·Filed 2016·Granted Jul 27, 2021·0 cites·21 claims
- 1644US10930729B2Fin-based thin film resistorINTEL CORP·Filed 2016·Granted Feb 23, 2021·0 cites·25 claims
- 1737US11967615B2Dual threshold voltage (VT) channel devices and their methods of fabricationINTEL CORP·Filed 2015·Granted Apr 23, 2024·0 cites·10 claims
- 1837US11121040B2Multi voltage threshold transistors through process and design-induced multiple work functionsINTEL CORP·Filed 2016·Granted Sep 14, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →