Inventor · disambiguated record
Neng-Jye Yang
Also filed as: YANG NENG-JYE
38 granted patents·11 pending applications·46 citations·filing 2013–2025
96Inventor score
Top patents by PatentIndex Score
49 records- 0198US11600521B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·5 cites·20 claims
- 0294US11342222B2Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·3 cites·20 claims
- 0390US10312106B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·5 cites·20 claims
- 0489US10699944B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·3 cites·20 claims
- 0589US10179878B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·5 cites·20 claims
- 0689US9460997B2Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 4, 2016·7 cites·20 claims
- 0788US2025300008A1Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0887US12347724B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 0987US10483108B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·3 cites·20 claims
- 1086US12188686B2Air curtain device and workpiece processing toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·1 cites·20 claims
- 1186US10685870B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·20 claims
- 1286US2025329584A1Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1384US11942362B2Surface modification layer for conductive feature formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
- 1484US11378882B2Chemical composition for tri-layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 1584US9589800B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·3 cites·20 claims
- 1682US2024282575A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1782US2024404953A1Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1880US12387977B2Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 1980US12368103B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 2080US12112953B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 2180US11362035B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·1 cites·20 claims
- 2280US2024395559A1Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2379US10676668B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 2476US11990339B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·0 cites·20 claims
- 2576US11742291B2Diffusion barrier layer for conductive via to decrease contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 2675US11923199B2Method and structure of middle layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 2775US11830770B2Self-aligned scheme for semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 2874US11735426B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2974US2024379436A1Self-aligned interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3073US9129814B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 8, 2015·2 cites·20 claims
- 3172US2025109870A1Air curtain device and workpiece processing toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3271US11776818B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 3371US10312073B2Selective removal of carbon-containing and nitrogen-containing silicon residuesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·1 cites·20 claims
- 3467US11398380B2Method and structure of middle layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 3567US11081350B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 3666US11101135B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 3766US2022277989A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3864US12494432B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 3964US11335589B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·0 cites·20 claims
- 4063US10985028B1Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 4162US10867803B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 4261US10529572B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·0 cites·21 claims
- 4361US2023011792A1Self-Aligned Interconnect Structure And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 4460US10658179B2Method and structure of middle layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·0 cites·20 claims
- 4558US10062645B2Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·0 cites·20 claims
- 4657US9679848B2Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·0 cites·20 claims
- 4754US10761423B2Chemical composition for tri-layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·0 cites·20 claims
- 4854US2022334473A1Chemical Composition for Tri-Layer RemovalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4954US2024266216A1Metal structures with seamsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Neng-Jye Yang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →