Inventor · disambiguated record
Nico Caspary
Also filed as: CASPARY NICO
9 granted patents·1 pending application·11 citations·filing 2014–2020
80Inventor score
Files withINFINEON TECHNOLOGIES AG10
Top patents by PatentIndex Score
10 records- 0195US9786748B2Semiconductor device, silicon wafer and silicon ingotINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 10, 2017·8 cites·6 claims
- 0285US11242616B2Silicon ingotINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 8, 2022·1 cites·10 claims
- 0381US10337117B2Method of manufacturing a silicon ingot and silicon ingotINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 2, 2019·1 cites·24 claims
- 0473US10566424B2Semiconductor device, silicon wafer and method of manufacturing a silicon waferINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 18, 2020·0 cites·24 claims
- 0572US10957767B2Semiconductor device, silicon wafer and method of manufacturing a silicon waferINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 23, 2021·0 cites·8 claims
- 0670US10014400B2Semiconductor device having a defined oxygen concentrationINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 3, 2018·1 cites·20 claims
- 0765US2017062568A1Semiconductor device, silicon wafer and method of manufacturing a silicon waferINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 0856US10724148B2Silicon ingot and method of manufacturing a silicon ingotINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 28, 2020·0 cites·11 claims
- 0952US10910475B2Method of manufacturing a silicon waferINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 2, 2021·0 cites·20 claims
- 1046US9728395B2Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygenINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 8, 2017·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →