Inventor · disambiguated record
Nicholas Fichtenbaum
Also filed as: FICHTENBAUM NICHOLAS · FICHTENBAUM NICHOLAS K
15 granted patents·2 pending applications·285 citations·filing 2009–2016
95Inventor score
Top patents by PatentIndex Score
17 records- 0196US8643062B2III-N device structures and methodsPARIKH PRIMIT·Filed 2011·Granted Feb 4, 2014·28 cites·33 claims
- 0296US8598937B2High power semiconductor electronic components with increased reliabilityLAL RAKESH K·Filed 2011·Granted Dec 3, 2013·55 cites·85 claims
- 0395US9865719B2Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2016·Granted Jan 9, 2018·13 cites·6 claims
- 0495US9685323B2Buffer layer structures suited for III-nitride devices with foreign substratesTRANSPHORM INC·Filed 2015·Granted Jun 20, 2017·13 cites·19 claims
- 0595US9245993B2Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2014·Granted Jan 26, 2016·16 cites·19 claims
- 0695US8895421B2III-N device structures and methodsTRANSPHORM INC·Filed 2013·Granted Nov 25, 2014·17 cites·21 claims
- 0795US8860495B2Method of forming electronic components with increased reliabilityTRANSPHORM INC·Filed 2013·Granted Oct 14, 2014·17 cites·19 claims
- 0894US9245992B2Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2014·Granted Jan 26, 2016·15 cites·25 claims
- 0994US9171836B2Method of forming electronic components with increased reliabilityTRANSPHORM INC·Filed 2014·Granted Oct 27, 2015·15 cites·32 claims
- 1094US8742459B2High voltage III-nitride semiconductor devicesMISHRA UMESH·Filed 2009·Granted Jun 3, 2014·32 cites·33 claims
- 1193US9224671B2III-N device structures and methodsTRANSPHORM INC·Filed 2014·Granted Dec 29, 2015·12 cites·22 claims
- 1293US9165766B2Buffer layer structures suited for III-nitride devices with foreign substratesKELLER STACIA·Filed 2012·Granted Oct 20, 2015·20 cites·49 claims
- 1392US9293561B2High voltage III-nitride semiconductor devicesTRANSPHORM INC·Filed 2014·Granted Mar 22, 2016·12 cites·37 claims
- 1487US9257547B2III-N device structures having a non-insulating substrateFICHTENBAUM NICHOLAS·Filed 2011·Granted Feb 9, 2016·14 cites·30 claims
- 1581US8193020B2Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor depositionKELLER STACIA·Filed 2009·Granted Jun 5, 2012·6 cites·27 claims
- 1654US2016133737A1Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2015·Application pending·0 cites
- 1737US2012126239A1Layer structures for controlling stress of heteroepitaxially grown iii-nitride layersKELLER STACIA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →