Inventor · disambiguated record
Niti Goel
Also filed as: GOEL NITI
35 granted patents·3 pending applications·195 citations·filing 2008–2018
97Inventor score
Top patents by PatentIndex Score
38 records- 0197US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 0295US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 0393US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 0492US8936976B2Conductivity improvements for III-V semiconductor devicesRADOSAVLJEVIC MARKO·Filed 2009·Granted Jan 20, 2015·16 cites·20 claims
- 0591US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 0691US8026509B2Tunnel field effect transistor and method of manufacturing sameINTEL CORP·Filed 2008·Granted Sep 27, 2011·16 cites·25 claims
- 0790US9590069B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2015·Granted Mar 7, 2017·5 cites·13 claims
- 0890US8872225B2Defect transferred and lattice mismatched epitaxial filmINTEL CORP·Filed 2012·Granted Oct 28, 2014·12 cites·25 claims
- 0988US9391181B2Lattice mismatched hetero-epitaxial filmINTEL CORP·Filed 2012·Granted Jul 12, 2016·10 cites·14 claims
- 1087US10181518B2Selective epitaxially grown III-V materials based devicesINTEL CORP·Filed 2017·Granted Jan 15, 2019·3 cites·12 claims
- 1186US9923087B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2017·Granted Mar 20, 2018·3 cites·19 claims
- 1286US8710490B2Semiconductor device having germanium active layer with underlying parasitic leakage barrier layerPILLARISETTY RAVI·Filed 2012·Granted Apr 29, 2014·8 cites·34 claims
- 1385US10693008B2Cladding layer epitaxy via template engineering for heterogeneous integration on siliconINTEL CORP·Filed 2013·Granted Jun 23, 2020·6 cites·10 claims
- 1482US9899505B2Conductivity improvements for III-V semiconductor devicesINTEL CORP·Filed 2015·Granted Feb 20, 2018·3 cites·14 claims
- 1582US9698013B2Methods and structures to prevent sidewall defects during selective epitaxyINTEL CORP·Filed 2013·Granted Jul 4, 2017·5 cites·20 claims
- 1681US8686402B2Tunnel field effect transistor and method of manufacturing sameGOEL NITI·Filed 2011·Granted Apr 1, 2014·6 cites·20 claims
- 1780US10249490B2Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxyINTEL CORP·Filed 2017·Granted Apr 2, 2019·2 cites·20 claims
- 1877US9112028B2Methods of containing defects for non-silicon device engineeringINTEL CORP·Filed 2014·Granted Aug 18, 2015·2 cites·15 claims
- 1976US9640622B2Selective epitaxially grown III-V materials based devicesINTEL CORP·Filed 2013·Granted May 2, 2017·2 cites·18 claims
- 2074US9640537B2Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxyINTEL CORP·Filed 2013·Granted May 2, 2017·2 cites·25 claims
- 2172US9099490B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationDASGUPTA SANSAPTAK·Filed 2012·Granted Aug 4, 2015·2 cites·17 claims
- 2269US10096474B2Methods and structures to prevent sidewall defects during selective epitaxyINTEL CORP·Filed 2017·Granted Oct 9, 2018·1 cites·10 claims
- 2366US9685381B2Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereonINTEL CORP·Filed 2013·Granted Jun 20, 2017·1 cites·21 claims
- 2464US10026686B2Decoupling capacitors and arrangementsINTEL CORP·Filed 2014·Granted Jul 17, 2018·2 cites·21 claims
- 2563US10573717B2Selective epitaxially grown III-V materials based devicesINTEL CORP·Filed 2018·Granted Feb 25, 2020·0 cites·20 claims
- 2662US9711591B2Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed therebyMUKHERJEE NILOY·Filed 2011·Granted Jul 18, 2017·1 cites·10 claims
- 2762US9653559B2Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making sameMUKHERJEE NILOY·Filed 2011·Granted May 16, 2017·1 cites·15 claims
- 2857US10268122B2Techniques to achieve area reduction through co-optimizing logic core blocks and memory redundanciesINTEL CORP·Filed 2014·Granted Apr 23, 2019·1 cites·8 claims
- 2956US9666583B2Methods of containing defects for non-silicon device engineeringINTEL CORP·Filed 2015·Granted May 30, 2017·0 cites·14 claims
- 3055US8716751B2Methods of containing defects for non-silicon device engineeringGOEL NITI·Filed 2012·Granted May 6, 2014·0 cites·15 claims
- 3154US9905651B2GE and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2017·Granted Feb 27, 2018·0 cites·17 claims
- 3254US2017162453A1Trench confined epitaxially grown device layer(s)INTEL CORP·Filed 2017·Application pending·0 cites
- 3353US10475706B2Making a defect free fin based device in lateral epitaxy overgrowth regionINTEL CORP·Filed 2017·Granted Nov 12, 2019·0 cites·18 claims
- 3453US9583396B2Making a defect free fin based device in lateral epitaxy overgrowth regionINTEL CORP·Filed 2013·Granted Feb 28, 2017·0 cites·23 claims
- 3552US9865684B2Nanoscale structure with epitaxial film having a recessed bottom portionINTEL CORP·Filed 2015·Granted Jan 9, 2018·0 cites·20 claims
- 3651US2017250182A1Integrating vlsi-compatible fin structures with selective epitaxial growth and fabricating devices thereonINTEL CORP·Filed 2017·Application pending·0 cites
- 3747US10217732B2Techniques for forming a compacted array of functional cellsINTEL CORP·Filed 2014·Granted Feb 26, 2019·0 cites·25 claims
- 3840US2017077050A1Techniques for forming integrated passive devicesINTEL CORP·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →