Inventor · disambiguated record
Nicolas J. Moll
Also filed as: MOLL NICOLAS J
13 granted patents·6 pending applications·176 citations·filing 1990–2006
92Inventor score
Files withAGILENT TECHNOLOGIES INC9HEWLETT PACKARD CO2KOPLEY THOMAS E1KOPLEY THOMAS EDWARD1LU JENNIFER1
Top patents by PatentIndex Score
19 records- 0196US7553730B2Methods of fabrication employing nanoscale mandrelsAGILENT TECHNOLOGIES INC·Filed 2006·Granted Jun 30, 2009·45 cites·20 claims
- 0282US7052618B2Nanostructures and methods of making the sameAGILENT TECHNOLOGIES INC·Filed 2004·Granted May 30, 2006·21 cites·28 claims
- 0364US6696710B2Heterojunction bipolar transistor (HBT) having an improved emitter-base junctionAGILENT TECHNOLOGIES INC·Filed 2001·Granted Feb 24, 2004·12 cites·24 claims
- 0463US7087941B2lll-phosphide light emitting devices with thin active layersPHILIPS LUMILEDS LIGHTING CO·Filed 2001·Granted Aug 8, 2006·11 cites·13 claims
- 0560US5055891AHeterostructure transistor using real-space electron transferHEWLETT PACKARD CO·Filed 1990·Granted Oct 8, 1991·26 cites·10 claims
- 0659US6258639B1Sintered gate schottky barrier fet passivated by a degradation-stop layerAGILENT TECHNOLOGIES INC·Filed 1999·Granted Jul 10, 2001·21 cites·20 claims
- 0758US5497012AUnipolar band minima devicesHEWLETT PACKARD CO·Filed 1994·Granted Mar 5, 1996·19 cites·20 claims
- 0856US6822274B2Heterojunction semiconductor device having an intermediate layer for providing an improved junctionAGILENT TECHNOLOGIES INC·Filed 2003·Granted Nov 23, 2004·8 cites·30 claims
- 0954US6768141B2Heterojunction bipolar transistor (HBT) having improved emitter-base grading structureAGILENT TECHNOLOGIES INC·Filed 2002·Granted Jul 27, 2004·6 cites·16 claims
- 1050US6992337B2Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probabilityAGILENT TECHNOLOGIES INC·Filed 2004·Granted Jan 31, 2006·4 cites·13 claims
- 1142US2008032238A1System and method for controlling the size and/or distribution of catalyst nanoparticles for nanostructure growthLU JENNIFER Q·Filed 2005·Application pending·0 cites
- 1240US2006084570A1System and method for growing nanostructures from a periphery of a catalyst layerKOPLEY THOMAS E·Filed 2005·Application pending·0 cites
- 1339US6949008B1System and method for planarizing a substrate surface having a non-planar surface topographyAGILENT TECHNOLOGIES INC·Filed 2004·Granted Sep 27, 2005·0 cites·25 claims
- 1439US2006060863A1System and method for controlling nanostructure growthLU JENNIFER·Filed 2004·Application pending·0 cites
- 1535US2006102931A1Field effect transistor having a carrier exclusion layerKOPLEY THOMAS EDWARD·Filed 2004·Application pending·0 cites
- 1633US6762480B2Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gainAGILENT TECHNOLOGIES INC·Filed 2001·Granted Jul 13, 2004·1 cites·39 claims
- 1730US5436469ABand minima transistorFiled 1994·Granted Jul 25, 1995·2 cites·20 claims
- 1828US2001020703A1Algainp light emitting devices with thin active layersFiled 1998·Application pending·0 cites
- 1926US2004104403A1Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gainFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →