Inventor · disambiguated record
Nicolas Nagel
Also filed as: NAGEL NICOLAS
39 granted patents·16 pending applications·394 citations·filing 1997–2008
98Inventor score
Top patents by PatentIndex Score
55 records- 0194US7790516B2Method of manufacturing at least one semiconductor component and memory cellsQIMONDA AG·Filed 2006·Granted Sep 7, 2010·29 cites·39 claims
- 0289US7714377B2Integrated circuits and methods of manufacturing thereofQIMONDA AG·Filed 2007·Granted May 11, 2010·19 cites·35 claims
- 0387US7662721B2Hard mask layer stack and a method of patterningINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 16, 2010·17 cites·4 claims
- 0485US5994153AFabrication process of a capacitor structure of semiconductor memory cellSONY CORP·Filed 1998·Granted Nov 30, 1999·51 cites·9 claims
- 0583US5864153ACapacitor structure of semiconductor memory cell and fabrication process thereofSONY CORP·Filed 1997·Granted Jan 26, 1999·46 cites·4 claims
- 0680US6358855B1Clean method for recessed conductive barriersINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 19, 2002·24 cites·15 claims
- 0779US7462038B2Interconnection structure and method of manufacturing the sameQIMONDA AG·Filed 2007·Granted Dec 9, 2008·18 cites·16 claims
- 0876US7838921B2Memory cell arrangementsQIMONDA AG·Filed 2006·Granted Nov 23, 2010·5 cites·26 claims
- 0975US7778073B2Integrated circuit having NAND memory cell stringsQIMONDA AG·Filed 2007·Granted Aug 17, 2010·9 cites·18 claims
- 1075US6787831B2Barrier stack with improved barrier propertiesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 7, 2004·15 cites·23 claims
- 1175US6573542B2Capacitor electrodes arrangement with oxygen iridium between silicon and oxygen barrier layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 3, 2003·18 cites·16 claims
- 1274US6583507B1Barrier for capacitor over plug structuresFiled 2002·Granted Jun 24, 2003·15 cites·24 claims
- 1368US7935608B2Storage cell having a T-shaped gate electrode and method for manufacturing the sameQIMONDA AG·Filed 2008·Granted May 3, 2011·4 cites·15 claims
- 1468US6011284AElectronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor deviceSONY CORP·Filed 1997·Granted Jan 4, 2000·33 cites·62 claims
- 1567US7521351B2Method for forming a semiconductor product and semiconductor productINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 21, 2009·4 cites·22 claims
- 1666US6794705B2Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materialsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 21, 2004·10 cites·21 claims
- 1762US7577010B2Integrated circuits, methods for manufacturing integrated circuits, integrated memory arraysQIMONDA AG·Filed 2007·Granted Aug 18, 2009·2 cites·28 claims
- 1861US8009477B2Integrated circuit and method of forming an integrated circuitQIMONDA AG·Filed 2008·Granted Aug 30, 2011·2 cites·30 claims
- 1961US7041551B2Device and a method for forming a capacitor deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 9, 2006·9 cites·24 claims
- 2061US6773986B2Method for fabricating a semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 10, 2004·10 cites·25 claims
- 2160US7320934B2Method of forming a contact in a flash memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 22, 2008·2 cites·18 claims
- 2258US7378700B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 27, 2008·1 cites·10 claims
- 2357US6858492B2Method for fabricating a semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 22, 2005·8 cites·50 claims
- 2456US7199002B2Process for fabrication of a ferroelectric capacitorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 3, 2007·5 cites·2 claims
- 2556US6815234B2Reducing stress in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 9, 2004·8 cites·10 claims
- 2653US7416976B2Method of forming contacts using auxiliary structuresINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 26, 2008·1 cites·22 claims
- 2753US7319270B2Multi-layer electrode and method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jan 15, 2008·4 cites·26 claims
- 2852US7042705B2Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processingTOSHIBA KK·Filed 2003·Granted May 9, 2006·3 cites·12 claims
- 2952US6940111B2Radiation protection in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 6, 2005·5 cites·13 claims
- 3051US6946735B2Side-wall barrier structure and method of fabricationINFINEON AG·Filed 2002·Granted Sep 20, 2005·5 cites·15 claims
- 3151US6614642B1Capacitor over plug structureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 2, 2003·3 cites·17 claims
- 3249US2008108203A1Multi-Layer Electrode and Method of Forming the SameLIAN JINGYU·Filed 2008·Application pending·0 cites
- 3346US7270884B2Adhesion layer for Pt on SiO2IBM·Filed 2003·Granted Sep 18, 2007·2 cites·24 claims
- 3445US7042037B1Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 9, 2006·2 cites·11 claims
- 3545US6621683B1Memory cells with improved reliabilityINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 16, 2003·1 cites·32 claims
- 3645US2007243707A1Hard Mask Layer Stack And A Method Of PatterningQIMONDA AG·Filed 2007·Application pending·0 cites
- 3744US7061035B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 13, 2006·1 cites·1 claims
- 3844US6839220B1Multi-layer barrier allowing recovery anneal for ferroelectric capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 4, 2005·2 cites·16 claims
- 3944US2008251833A1Integrated circuits and methods of manufactureSPECHT MICHAEL·Filed 2007·Application pending·0 cites
- 4043US7009230B2Barrier stack with improved barrier propertiesTOSHIBA KK·Filed 2003·Granted Mar 7, 2006·0 cites·28 claims
- 4142US6704219B2FeRAM memory and method for manufacturing itINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 9, 2004·1 cites·36 claims
- 4242US2008237694A1Integrated circuit, cell, cell arrangement, method for manufacturing an integrated circuit, method for manufacturing a cell, memory moduleSPECHT MICHAEL·Filed 2007·Application pending·0 cites
- 4342US2008237738A1Integrated circuit, cell, cell arrangement, method for manufacturing an integrated circuit, method for manufacturing a cell arrangement; memory moduleKLEINT CHRISTOPH ANDREAS·Filed 2007·Application pending·0 cites
- 4438US2007077748A1Method for forming a semiconductor product and semiconductor productOLLIGS DOMINIK·Filed 2005·Application pending·0 cites
- 4538US2004197984A1Adhesion layer for Pt on SiO2INFINEON TECHNOLOGIES CORP·Filed 2004·Application pending·0 cites
- 4636US2004087080A1Methods for producing thin layers, such as for use in integrated circuitsFiled 2002·Application pending·0 cites
- 4736US2004163233A1Methods of forming electrical connections within ferroelectric devicesFiled 2003·Application pending·0 cites
- 4835US2005084984A1Method for forming ferrocapacitors and FeRAM devicesFiled 2003·Application pending·0 cites
- 4935US2005196917A1Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitorsFiled 2004·Application pending·0 cites
- 5034US2001024868A1Microelectronic structure and method of fabricating itFiled 2000·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Nicolas Nagel files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →