Inventor · disambiguated record
Nikhil Sivadas
Also filed as: SIVADAS NIKHIL
0 granted patents·2 pending applications·0 citations·filing 2023–2024
Technology areasH10P
Files withSAMSUNG ELECTRONICS CO LTD2
Top patents by PatentIndex Score
2 records- 0156US2025140559A1N-type of transition metal dichalcogenide channels via surface charge transfer from a dopant layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0254US2024347617A1Elemental doping of high-k dielectric oxide to create p-type conductivity in thin layer channels via surface charge transferSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →