Inventor · disambiguated record
Niamh Waldron
Also filed as: WALDRON NIAMH
12 granted patents·2 pending applications·14 citations·filing 2011–2021
84Inventor score
Top patents by PatentIndex Score
14 records- 0187US9324818B2Gate-all-around semiconductor device and method of fabricating the sameIMEC VZW·Filed 2015·Granted Apr 26, 2016·5 cites·11 claims
- 0284US9355889B2Semiconductor-on-insulator device and method of fabricating the sameIMEC VZW·Filed 2015·Granted May 31, 2016·5 cites·9 claims
- 0370US11195767B2Integration of a III-V device on a Si substrateIMEC VZW·Filed 2019·Granted Dec 7, 2021·1 cites·12 claims
- 0468US9601488B2Gate-all-around semiconductor device and method of fabricating the sameIMEC VZW·Filed 2016·Granted Mar 21, 2017·1 cites·20 claims
- 0568US9218964B2Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereofWANG GANG·Filed 2011·Granted Dec 22, 2015·2 cites·19 claims
- 0655US10566250B2High aspect ratio channel semiconductor device and method of manufacturing sameIMEC VZW·Filed 2019·Granted Feb 18, 2020·0 cites·14 claims
- 0752US11322390B2Cointegration of gallium nitride and siliconIMEC VZW·Filed 2020·Granted May 3, 2022·0 cites·15 claims
- 0849US10224250B2High aspect ratio channel semiconductor device and method of manufacturing sameIMEC VZW·Filed 2017·Granted Mar 5, 2019·0 cites·9 claims
- 0948US11646200B2Integration of a III-V construction on a group IV substrateIMEC VZW·Filed 2021·Granted May 9, 2023·0 cites·18 claims
- 1045US11004962B2Integrated circuit including at least one nano-ridge transistorIMEC VZW·Filed 2019·Granted May 11, 2021·0 cites·21 claims
- 1144US2015076620A1Method for manufacturing transistors and associated substrateIMEC VZW·Filed 2014·Application pending·0 cites
- 1241US2021151593A1Process for Scaling a Gate LengthIMEC VZW·Filed 2020·Application pending·0 cites
- 1340US10340188B2Method of transferring a semiconductor layerIMEC VZW·Filed 2017·Granted Jul 2, 2019·0 cites·21 claims
- 1433US8912055B2Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable therebyHOFFMAN THOMAS Y·Filed 2012·Granted Dec 16, 2014·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →