Inventor · disambiguated record
Nobuyuki Hayama
Also filed as: HAYAMA NOBUYUKI · YAMAGATA TOSHIO
9 granted patents·1 pending application·462 citations·filing 1979–2010
91Inventor score
Top patents by PatentIndex Score
10 records- 0196US6492669B2Semiconductor device with schottky electrode having high schottky barrierNEC CORP·Filed 2001·Granted Dec 10, 2002·134 cites·20 claims
- 0295US6465814B2Semiconductor deviceNEC CORP·Filed 2001·Granted Oct 15, 2002·104 cites·24 claims
- 0391US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 0490US6765241B2Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitancesNEC CORP·Filed 2001·Granted Jul 20, 2004·54 cites·10 claims
- 0589US6441391B1Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrateNEC CORP·Filed 2001·Granted Aug 27, 2002·52 cites·3 claims
- 0679US9076906B2Hetero-junction bipolar phototransistor with improved noise characteristicOGURA MUTSUO·Filed 2010·Granted Jul 7, 2015·3 cites·1 claims
- 0777US4217783AMagnetoresistive pressure-sensing device for automotive electronic engine control systemsNIPPON ELECTRIC CO·Filed 1979·Granted Aug 19, 1980·24 cites·17 claims
- 0873US6440822B1Method of manufacturing semiconductor device with sidewall metal layersNEC CORP·Filed 2001·Granted Aug 27, 2002·19 cites·15 claims
- 0956US6507089B1Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor deviceNEC CORP·Filed 2000·Granted Jan 14, 2003·7 cites·3 claims
- 1033US2003034504A1Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →