Inventor · disambiguated record
Nobuhiko Hayashi
Also filed as: HAYASHI NOBUHIKO
49 granted patents·19 pending applications·861 citations·filing 1982–2019
98Inventor score
Top patents by PatentIndex Score
68 records- 0197US6994751B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Feb 7, 2006·127 cites·12 claims
- 0295US8437117B2Solid electrolytic capacitor with improved stress resistance in the vicinity of the anode lead and the anode terminalUMEMOTO TAKASHI·Filed 2010·Granted May 7, 2013·25 cites·7 claims
- 0395US7977701B2Semiconductor device with SiO2 film formed on side surface of nitride based semiconductor layerSANYO ELECTRIC CO·Filed 2010·Granted Jul 12, 2011·14 cites·8 claims
- 0494US6319742B1Method of forming nitride based semiconductor layerSANYO ELECTRIC CO·Filed 1999·Granted Nov 20, 2001·113 cites·9 claims
- 0592US6580736B1Semiconductor light emitting deviceSANYO ELECTRIC CO·Filed 2000·Granted Jun 17, 2003·46 cites·17 claims
- 0692US6522676B1Nitride semiconductor laser deviceSANYO ELECTRIC CO·Filed 2000·Granted Feb 18, 2003·44 cites·28 claims
- 0790US7457507B2Organometallic polymer materialSANYO ELECTRIC CO·Filed 2005·Granted Nov 25, 2008·21 cites·19 claims
- 0887US7599133B2Optical part for camera and method of fabricating the sameSANYO ELECTRIC CO·Filed 2008·Granted Oct 6, 2009·7 cites·9 claims
- 0986US7355208B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2005·Granted Apr 8, 2008·8 cites·20 claims
- 1085US8746752B2Joint and spacer used thereinHAYASHI NOBUHIKO·Filed 2012·Granted Jun 10, 2014·16 cites·11 claims
- 1185US7829900B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2008·Granted Nov 9, 2010·7 cites·11 claims
- 1282US7388234B2Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layerSANYO ELECTRIC CO·Filed 2005·Granted Jun 17, 2008·5 cites·5 claims
- 1382US6130446AElectrode of n-type nitridide semiconductor, semiconductor device having the electrode, and method of fabricating the sameSANYO ELECTRIC CO·Filed 1998·Granted Oct 10, 2000·51 cites·18 claims
- 1481US6891871B1Semiconductor light emitting deviceSANYO ELECTRIC CO·Filed 2000·Granted May 10, 2005·36 cites·18 claims
- 1581US5416790ASemiconductor laser with a self-sustained pulsationSANYO ELECTRIC CO·Filed 1993·Granted May 16, 1995·34 cites·10 claims
- 1678US7279344B2Method of forming a nitride-based semiconductorSANYO ELECTRIC CO·Filed 2006·Granted Oct 9, 2007·4 cites·5 claims
- 1778US6534800B1Semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2000·Granted Mar 18, 2003·26 cites·9 claims
- 1877US8169774B2Solid electrolytic capacitor and a method for manufacturing sameHAYASHI NOBUHIKO·Filed 2009·Granted May 1, 2012·4 cites·6 claims
- 1974US7582358B2Organic-inorganic composite forming material, organic-inorganic composite, production method thereof and optical elementSANYO ELECTRIC CO·Filed 2006·Granted Sep 1, 2009·2 cites·12 claims
- 2074US6577006B1III-V nitride based semiconductor light emitting deviceSANYO ELECTRIC CO·Filed 1999·Granted Jun 10, 2003·33 cites·8 claims
- 2173US7887910B2Laminated optical elementSANYO ELECTRIC CO·Filed 2006·Granted Feb 15, 2011·6 cites·19 claims
- 2273US7768030B2Nitride based semiconductor device with film for preventing short circuitingSANYO ELECTRIC CO·Filed 2008·Granted Aug 3, 2010·2 cites·8 claims
- 2373US6756245B2Method of fabricating semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 29, 2004·19 cites·9 claims
- 2473US6734503B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2002·Granted May 11, 2004·16 cites·32 claims
- 2570US6759139B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Jul 6, 2004·13 cites·23 claims
- 2668US7181121B2Optical device and method for manufacturing the sameSANYO ELECTRIC CO·Filed 2004·Granted Feb 20, 2007·10 cites·15 claims
- 2767US6904071B1Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2000·Granted Jun 7, 2005·8 cites·21 claims
- 2866US7120181B1Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2000·Granted Oct 10, 2006·8 cites·16 claims
- 2966US5960019ASemiconductor laser device and method of designing the sameSANYO ELECTRIC CO·Filed 1997·Granted Sep 28, 1999·30 cites·46 claims
- 3065US7529044B2Optical element, optical system and methods of manufacturing the same as well as optical equipmentSANYO ELECTRIC CO·Filed 2006·Granted May 5, 2009·3 cites·20 claims
- 3163US7116868B2Optical branch device and optical coupler moduleSANYO ELECTRIC CO·Filed 2005·Granted Oct 3, 2006·3 cites·5 claims
- 3262US7483616B2Optical waveguideSANYO ELECTRIC CO·Filed 2007·Granted Jan 27, 2009·2 cites·3 claims
- 3361US7109530B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2004·Granted Sep 19, 2006·5 cites·5 claims
- 3460US6713845B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2002·Granted Mar 30, 2004·5 cites·7 claims
- 3560US4441436ASolid fuel burning methods and apparatusNOMA TAKUMI·Filed 1982·Granted Apr 10, 1984·17 cites·15 claims
- 3659US7521725B2Optical waveguide and the method of fabricating the sameSANYO ELECTRIC CO·Filed 2005·Granted Apr 21, 2009·2 cites·8 claims
- 3759US6872982B2Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layerSANYO ELECTRIC CO·Filed 2001·Granted Mar 29, 2005·4 cites·2 claims
- 3859US5506170AMethod of making a semiconductor laser with a self-sustained pulsationSANYO ELECTRIC CO·Filed 1994·Granted Apr 9, 1996·14 cites·10 claims
- 3958US7396873B2Organometallic polymer material and process for preparing the sameSANYO ELECTRIC CO·Filed 2004·Granted Jul 8, 2008·3 cites·21 claims
- 4058US7054070B2Gradient-index lens and composite optical element utilizing the sameSANYO ELECTRIC CO·Filed 2004·Granted May 30, 2006·5 cites·20 claims
- 4157US6956884B1Semiconductor light emitting deviceSANYO ELECTRIC CO·Filed 2000·Granted Oct 18, 2005·7 cites·7 claims
- 4256US6914922B2Nitride based semiconductor light emitting device and nitride based semiconductor laser deviceSANYO ELECTRIC CO·Filed 2001·Granted Jul 5, 2005·6 cites·11 claims
- 4356US2014291978A1Joint and method for manufacturing jointONDA MFG CO LTD·Filed 2014·Application pending·0 cites
- 4455US5610096ASemiconductor laser with a self sustained pulsationSANYO ELECTRIC CO·Filed 1995·Granted Mar 11, 1997·16 cites·11 claims
- 4555US2008233417A1Optical polymer material and optical componentSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 4653US5608752ASemiconductor laser device and method of designing the sameSANYO ELECTRIC CO·Filed 1995·Granted Mar 4, 1997·18 cites·27 claims
- 4753US2008161444A1Organic-inorganic composite forming material, organic-inorganic composite and optical element using the sameSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 4852US2008248603A1Nitride-based semiconductor element and method of preparing nitride-based semiconductorSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 4952US2012306118A1Joint and method for manufacturing jointHAYASHI NOBUHIKO·Filed 2011·Application pending·0 cites
- 5051US2007225466A1Curable organometallic composition, organometallic polymer material and optical componentSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →