Inventor · disambiguated record
Norihiro Hoshino
Also filed as: HOSHINO NORIHIRO
5 granted patents·6 pending applications·2 citations·filing 2014–2025
64Inventor score
Files withDENSO CORP5CENTRAL RES INST ELECTRIC POWER IND4CENTRAL RES INST ELECT1MIRISE Technologies Corporation1
Top patents by PatentIndex Score
11 records- 0192US12071709B2Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal waferDENSO CORP·Filed 2023·Granted Aug 27, 2024·2 cites·2 claims
- 0276US2024191392A1Silicon carbide single crystal and manufacturing method of silicon carbide single crystalDENSO CORP·Filed 2024·Application pending·0 cites
- 0373US2024110309A1Method for manufacturing silicon carbide single crystal and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2023·Application pending·0 cites
- 0472US2023279580A1Silicon carbide single crystal and manufacturing method of silicon carbide single crystalDENSO CORP·Filed 2023·Application pending·0 cites
- 0568US2025215613A1Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2025·Application pending·0 cites
- 0666US11846040B2Silicon carbide single crystalDENSO CORP·Filed 2020·Granted Dec 19, 2023·0 cites·12 claims
- 0764US12281410B2Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2021·Granted Apr 22, 2025·0 cites·1 claims
- 0860US2024110308A1Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystalCENTRAL RES INST ELECTRIC POWER IND·Filed 2023·Application pending·0 cites
- 0955US12252808B2Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal waferDENSO CORP·Filed 2020·Granted Mar 18, 2025·0 cites·9 claims
- 1052US2015376813A1Method for producing hexagonal single crystal, method for producing hexagonal single crystal wafer, hexagonal single crystal wafer, and hexagonal single crystal elementCENTRAL RES INST ELECT·Filed 2014·Application pending·0 cites
- 1147US12297562B2Silicon carbide ingot including screw dislocationsMIRISE Technologies Corporation·Filed 2022·Granted May 13, 2025·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →