Inventor · disambiguated record
Nobuyuki Kasai
Also filed as: KASAI NOBUYUKI
11 granted patents·2 pending applications·195 citations·filing 1991–2021
90Inventor score
Top patents by PatentIndex Score
13 records- 0184US5675159ARecessed gate field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 7, 1997·65 cites·11 claims
- 0265US5288654AMethod of making a mushroom-shaped gate electrode of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 22, 1994·33 cites·2 claims
- 0363US5250822AField effect transistorMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 5, 1993·22 cites·9 claims
- 0460US5648668AHigh breakdown voltage field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 15, 1997·22 cites·1 claims
- 0558US7678596B2Method for manufacturing monolithic semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 16, 2010·1 cites·2 claims
- 0655US7760233B2Portable terminal and communication system controllable by remote mailKYOCERA CORP·Filed 2004·Granted Jul 20, 2010·2 cites·18 claims
- 0753US2025236896A1Transformant of genus hydrogenophilus bacterium capable of producing aspartic acid and methionineSUMITOMO CHEMICAL CO·Filed 2021·Application pending·0 cites
- 0851US5888859AMethod of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 30, 1999·18 cites·7 claims
- 0949US5185534AMonolithic parallel connected transistor structureMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 9, 1993·13 cites·6 claims
- 1046US9620289B2Ceramic capacitor for suppressing high-frequency noiseTOSHIBA KK·Filed 2014·Granted Apr 11, 2017·0 cites·7 claims
- 1146US5917231ASemiconductor device including an insulative layer having a gapMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 29, 1999·14 cites·4 claims
- 1237US2002196828A1Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 1334US5220186ASemiconductor device with a mushroom-shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 15, 1993·5 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →