Inventor · disambiguated record
Norikatsu Koide
Also filed as: KOIDE NORIKATSU
47 granted patents·2 pending applications·2,089 citations·filing 1992–2013
99Inventor score
Top patents by PatentIndex Score
49 records- 0197US6121121AMethod for manufacturing gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 1999·Granted Sep 19, 2000·277 cites·3 claims
- 0296US6040588ASemiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Mar 21, 2000·112 cites·10 claims
- 0395US7176497B2Group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2005·Granted Feb 13, 2007·20 cites·14 claims
- 0495US6420733B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2001·Granted Jul 16, 2002·80 cites·7 claims
- 0595US6326236B1Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2000·Granted Dec 4, 2001·78 cites·2 claims
- 0694US6541293B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Apr 1, 2003·63 cites·4 claims
- 0791US5862167ALight-emitting semiconductor device using gallium nitride compoundTOYODA GOSEI KK·Filed 1997·Granted Jan 19, 1999·177 cites·5 claims
- 0891US5620557ASapphireless group III nitride semiconductor and method for making sameTOYODA GOSEI KK·Filed 1995·Granted Apr 15, 1997·139 cites·12 claims
- 0990US6844572B2Light emitting semiconductor device and method of fabricating the sameSHARP KK·Filed 2003·Granted Jan 18, 2005·49 cites·8 claims
- 1090US6703253B2Method for producing semiconductor light emitting device and semiconductor light emitting device produced by such methodSHARP KK·Filed 2002·Granted Mar 9, 2004·82 cites·19 claims
- 1190US6635901B2Semiconductor device including an InGaAIN layerSAWAKI NOBUHIKO·Filed 2001·Granted Oct 21, 2003·118 cites·10 claims
- 1289US7154125B2Nitride-based semiconductor light-emitting device and manufacturing method thereofSHARP KK·Filed 2003·Granted Dec 26, 2006·65 cites·3 claims
- 1389US5278433ALight-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layerTOYODA GOSEI KK·Filed 1992·Granted Jan 11, 1994·86 cites·19 claims
- 1487US7619261B2Method for manufacturing gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2006·Granted Nov 17, 2009·11 cites·5 claims
- 1587US6821800B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Nov 23, 2004·29 cites·4 claims
- 1687US6423984B1Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 1999·Granted Jul 23, 2002·85 cites·5 claims
- 1787US5627109AMethod of manufacturing a semiconductor device that uses a sapphire substrateFiled 1995·Granted May 6, 1997·71 cites·17 claims
- 1886US6362017B1Light-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 2000·Granted Mar 26, 2002·44 cites·24 claims
- 1985US5733796ALight-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1995·Granted Mar 31, 1998·77 cites·2 claims
- 2083US6617668B1Methods and devices using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Sep 9, 2003·25 cites·5 claims
- 2180US6930329B2Method for manufacturing gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted Aug 16, 2005·14 cites·18 claims
- 2280US6410939B1Semiconductor light-emitting device and method of manufacturing the sameSHARP KK·Filed 2001·Granted Jun 25, 2002·33 cites·10 claims
- 2380US5604763AGroup III nitride compound semiconductor laser diode and method for producing sameTOYODA GOSEI KK·Filed 1995·Granted Feb 18, 1997·49 cites·8 claims
- 2480US5583879AGallum nitride group compound semiconductor laser diodeTOYODA GOSEI KK·Filed 1995·Granted Dec 10, 1996·48 cites·7 claims
- 2577US6888867B2Semiconductor laser device and fabrication method thereofSHARP KK·Filed 2002·Granted May 3, 2005·14 cites·19 claims
- 2677US6580098B1Method for manufacturing gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Jun 17, 2003·12 cites·14 claims
- 2776US7939349B2Nitride-based semiconductor light emitting device and manufacturing method thereofSHARP KK·Filed 2006·Granted May 10, 2011·5 cites·3 claims
- 2874US5650641ASemiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such deviceTOYODA GOSEI KK·Filed 1995·Granted Jul 22, 1997·56 cites·28 claims
- 2974US5587593ALight-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 1995·Granted Dec 24, 1996·55 cites·1 claims
- 3073US6881651B2Methods and devices using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted Apr 19, 2005·13 cites·15 claims
- 3173US6853009B2Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2002·Granted Feb 8, 2005·16 cites·4 claims
- 3267US6765234B2Semiconductor light emitting device and method for producing the sameSHARP KK·Filed 2001·Granted Jul 20, 2004·15 cites·12 claims
- 3364US6835966B2Method for manufacturing gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted Dec 28, 2004·5 cites·23 claims
- 3463US6806115B2Semiconductor light emitting device and method for producing the sameSHARP KK·Filed 2002·Granted Oct 19, 2004·15 cites·11 claims
- 3561US6607595B1Method for producing a light-emitting semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Aug 19, 2003·8 cites·100 claims
- 3661US6472690B1Gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·7 cites·37 claims
- 3758US7045809B2Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted May 16, 2006·5 cites·9 claims
- 3858US6893945B2Method for manufacturing gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2004·Granted May 17, 2005·3 cites·33 claims
- 3955US6249012B1Light emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1997·Granted Jun 19, 2001·13 cites·9 claims
- 4053US6984536B2Method for manufacturing a gallium nitride group compound semiconductorUNIV NAGOYA·Filed 2002·Granted Jan 10, 2006·4 cites·51 claims
- 4151US6818926B2Method for manufacturing gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted Nov 16, 2004·3 cites·15 claims
- 4249US6962828B1Methods for manufacturing a light-emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Nov 8, 2005·2 cites·20 claims
- 4347US6830992B1Method for manufacturing a gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Dec 14, 2004·1 cites·32 claims
- 4447US6822270B2Semiconductor light emitting device having gallium nitride based compound semiconductor layerSHARP KK·Filed 2003·Granted Nov 23, 2004·3 cites·12 claims
- 4541US6472689B1Light emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·0 cites·37 claims
- 4638US2003116774A1Nitride-based semiconductor light-emitting device and manufacturing method thereofFiled 2002·Application pending·0 cites
- 4736US2015228847A1High-luminance nitride light-emitting device and method for manufacturing sameILJIN LED CO LTD·Filed 2013·Application pending·0 cites
- 4834US6593599B1Light-emitting semiconductor device using gallium nitride group compoundJAPAN SCIENCE & TECH CORP·Filed 1999·Granted Jul 15, 2003·2 cites·41 claims
- 4930US6188087B1Semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Feb 13, 2001·0 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →