Inventor · disambiguated record
Noboru Mikami
Also filed as: MIKAMI NOBORU
16 granted patents·1 pending application·387 citations·filing 1981–2006
95Inventor score
Top patents by PatentIndex Score
17 records- 0188US6110291AThin film forming apparatus using laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 29, 2000·67 cites·3 claims
- 0284US6344991B1Nonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 5, 2002·38 cites·10 claims
- 0383US7022606B2Underlayer film for copper, and a semiconductor device including the underlayer filmMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Apr 4, 2006·30 cites·3 claims
- 0480US6015989ASemiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygenMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 18, 2000·53 cites·6 claims
- 0578US7192540B2Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Mar 20, 2007·6 cites·8 claims
- 0676US6239460B1Semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 29, 2001·36 cites·7 claims
- 0775US4929081ASystem for detecting defects in a regularly arranged pattern such as an integrated circuit or the likeMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 29, 1990·34 cites·8 claims
- 0874US6458719B1Low dielectric constant film composed of boron, nitrogen, and hydrogen having thermal resistance, process for forming the film, use of the film between semiconductor device layers, and the device formed from the filmMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 1, 2002·17 cites·8 claims
- 0973US6049103ASemiconductor capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 11, 2000·30 cites·2 claims
- 1064US7029605B2Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 18, 2006·9 cites·7 claims
- 1159US6187622B1Semiconductor memory device and method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 13, 2001·19 cites·16 claims
- 1257US5159561AZero-phase sequence current detectorMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Oct 27, 1992·23 cites·2 claims
- 1349US5939744ASemiconductor device with x-ray absorption layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 17, 1999·10 cites·4 claims
- 1449US4465160AHorn speakerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1981·Granted Aug 14, 1984·13 cites·6 claims
- 1545US6420191B2Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 16, 2002·2 cites·10 claims
- 1641US7847296B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Dec 7, 2010·0 cites·8 claims
- 1735US2002063338A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →