Inventor · disambiguated record
Nobuki Miyakoshi
Also filed as: MIYAKOSHI NOBUKI
9 granted patents·45 citations·filing 1999–2017
84Inventor score
Files withSHINDENGEN ELECTRIC MFG9
Top patents by PatentIndex Score
9 records- 0181US9287393B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2014·Granted Mar 15, 2016·6 cites·18 claims
- 0277US9960267B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2014·Granted May 1, 2018·3 cites·15 claims
- 0372US7923771B2Semiconductor device and method for manufacturing the sameSHINDENGEN ELECTRIC MFG·Filed 2007·Granted Apr 12, 2011·5 cites·9 claims
- 0463US6369424B1Field effect transistor having high breakdown withstand capacitySHINDENGEN ELECTRIC MFG·Filed 2000·Granted Apr 9, 2002·12 cites·9 claims
- 0558US9196722B2Semiconductor device and method of manufacturing semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2014·Granted Nov 24, 2015·1 cites·15 claims
- 0657US6563169B1Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layerSHINDENGEN ELECTRIC MFG·Filed 1999·Granted May 13, 2003·18 cites·23 claims
- 0741US8343833B2Semiconductor device and method for manufacturing the sameSHINDENGEN ELECTRIC MFG·Filed 2010·Granted Jan 1, 2013·0 cites·4 claims
- 0840US10714346B2Method of manufacturing semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2017·Granted Jul 14, 2020·0 cites·8 claims
- 0931US6635926B2Field effect transistor with high withstand voltage and low resistanceSHINDENGEN ELECTRIC MFG·Filed 2001·Granted Oct 21, 2003·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →