Inventor · disambiguated record
Nobuyoshi Natsuaki
Also filed as: NATSUAKI NOBUYOSHI
34 granted patents·769 citations·filing 1980–2007
98Inventor score
Top patents by PatentIndex Score
34 records- 0192US7053007B2Method for fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2005·Granted May 30, 2006·10 cites·21 claims
- 0291US6063686AMethod of manufacturing an improved SOI (silicon-on-insulator) semiconductor integrated circuit deviceFiled 1998·Granted May 16, 2000·134 cites·40 claims
- 0389US6784116B2Fabrication process of a semiconductor integrated circuit deviceHITACHI LTD·Filed 2003·Granted Aug 31, 2004·29 cites·23 claims
- 0489US4565584AMethod of producing single crystal film utilizing a two-step heat treatmentHITACHI LTD·Filed 1983·Granted Jan 21, 1986·76 cites·8 claims
- 0588US6503819B2Fabrication process of a semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Jan 7, 2003·27 cites·34 claims
- 0688US6197702B1Fabrication process of a semiconductor integrated circuit deviceHITACHI LTD·Filed 1998·Granted Mar 6, 2001·59 cites·26 claims
- 0787US6066508AProcess for manufacturing semiconductor integrated circuit device including treatment of gas used in the processHITACHI LTD·Filed 1998·Granted May 23, 2000·43 cites·22 claims
- 0885US6528431B2Method for fabricating semiconductor integrated circuit drive using an oxygen and hydrogen catalystHITACHI LTD·Filed 2001·Granted Mar 4, 2003·17 cites·15 claims
- 0984US6239041B1Method for fabricating semiconductor integrated circuit deviceHITACHI LTD·Filed 1998·Granted May 29, 2001·36 cites·29 claims
- 1084US4655875AIon implantation processHITACHI LTD·Filed 1986·Granted Apr 7, 1987·64 cites·10 claims
- 1182US6569780B2Method for fabricating semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted May 27, 2003·13 cites·29 claims
- 1281US7250376B2Method for fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2005·Granted Jul 31, 2007·3 cites·20 claims
- 1380US7122469B2Fabrication process of a semiconductor integrated circuit deviceHITACHI LTD·Filed 2005·Granted Oct 17, 2006·4 cites·6 claims
- 1479US6521550B2Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the processHITACHI LTD·Filed 2001·Granted Feb 18, 2003·14 cites·23 claims
- 1577US6855642B2Method for fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2003·Granted Feb 15, 2005·9 cites·4 claims
- 1676US4729964AMethod of forming twin doped regions of the same depth by high energy implantHITACHI LTD·Filed 1986·Granted Mar 8, 1988·51 cites·19 claims
- 1775US6528403B2Fabrication process of a semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Mar 4, 2003·11 cites·3 claims
- 1874US4498951AMethod of manufacturing single-crystal filmHITACHI LTD·Filed 1982·Granted Feb 12, 1985·39 cites·18 claims
- 1973US6417114B2Method for fabricating semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Jul 9, 2002·7 cites·22 claims
- 2072US7799690B2Method for fabricating semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2007·Granted Sep 21, 2010·1 cites·10 claims
- 2172US6319860B1Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the processHITACHI LTD·Filed 2000·Granted Nov 20, 2001·9 cites·35 claims
- 2271US6596650B2Method for fabricating semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Jul 22, 2003·6 cites·67 claims
- 2370US6518202B2Method for fabricating semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Feb 11, 2003·6 cites·22 claims
- 2470US4808546ASOI process for forming a thin film transistor using solid phase epitaxyHITACHI LTD·Filed 1987·Granted Feb 28, 1989·37 cites·24 claims
- 2569US6723665B2Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the processRENESAS TECH CORP·Filed 2003·Granted Apr 20, 2004·8 cites·7 claims
- 2666US6987069B2Fabrication process of a semiconductor integrated circuit deviceHITACHI LTD·Filed 2004·Granted Jan 17, 2006·6 cites·6 claims
- 2765US6602808B2Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the processHITACHI LTD·Filed 2001·Granted Aug 5, 2003·6 cites·7 claims
- 2865US6518201B1Method for fabricating semiconductor integrated circuit deviceHITACHI LTD·Filed 2000·Granted Feb 11, 2003·4 cites·30 claims
- 2958US7008880B2Method for fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2004·Granted Mar 7, 2006·2 cites·9 claims
- 3054US6962881B2Method for fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2004·Granted Nov 8, 2005·1 cites·33 claims
- 3147US6962880B2Method for fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2004·Granted Nov 8, 2005·0 cites·6 claims
- 3247US4351674AMethod of producing a semiconductor deviceHITACHI LTD·Filed 1980·Granted Sep 28, 1982·13 cites·11 claims
- 3346US4742025AMethod of fabricating a semiconductor device including selective etching of a silicide layerHITACHI LTD·Filed 1985·Granted May 3, 1988·16 cites·13 claims
- 3441US4819055ASemiconductor device having a PN junction formed on an insulator filmHITACHI LTD·Filed 1988·Granted Apr 4, 1989·8 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →