Inventor · disambiguated record
Nobuaki Otsuka
Also filed as: OTSUKA NOBUAKI
27 granted patents·2 pending applications·637 citations·filing 1989–2013
97Inventor score
Top patents by PatentIndex Score
29 records- 0195US6307791B1Semiconductor deviceTOSHIBA KK·Filed 2000·Granted Oct 23, 2001·115 cites·10 claims
- 0291US7362646B2Semiconductor memory deviceTOSHIBA KK·Filed 2006·Granted Apr 22, 2008·24 cites·14 claims
- 0390US6466487B2Semiconductor device with impedance controllable output bufferTOSHIBA KK·Filed 2001·Granted Oct 15, 2002·57 cites·20 claims
- 0489US7313038B2Nonvolatile memory including a verify circuitTOSHIBA KK·Filed 2005·Granted Dec 25, 2007·19 cites·20 claims
- 0589US6222773B1Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasingTOSHIBA KK·Filed 2000·Granted Apr 24, 2001·48 cites·6 claims
- 0683US7400524B2Semiconductor memory device and semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jul 15, 2008·14 cites·17 claims
- 0782US6088281ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1998·Granted Jul 11, 2000·51 cites·27 claims
- 0881US5568419ANon-volatile semiconductor memory device and data erasing method thereforTOSHIBA KK·Filed 1995·Granted Oct 22, 1996·49 cites·24 claims
- 0980US6275407B1Semiconductor memory device having sense and data lines for use to read and write operationsTOSHIBA KK·Filed 2000·Granted Aug 14, 2001·28 cites·21 claims
- 1079US6992945B2Fuse circuitTOSHIBA KK·Filed 2003·Granted Jan 31, 2006·25 cites·19 claims
- 1178US7957176B2Semiconductor memory device with improved resistance to disturbance and improved writing characteristicTOSHIBA KK·Filed 2007·Granted Jun 7, 2011·11 cites·13 claims
- 1278US7368801B2Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the sameTOSHIBA KK·Filed 2004·Granted May 6, 2008·23 cites·20 claims
- 1376US8105886B2Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the sameOTSUKA NOBUAKI·Filed 2008·Granted Jan 31, 2012·8 cites·7 claims
- 1476US6021071ASemiconductor integrated circuitTOSHIBA KK·Filed 1998·Granted Feb 1, 2000·37 cites·24 claims
- 1575US7924080B2Level shifter circuitTOSHIBA KK·Filed 2009·Granted Apr 12, 2011·8 cites·16 claims
- 1675US6737912B2Resistance division circuit and semiconductor deviceTOSHIBA KK·Filed 2003·Granted May 18, 2004·20 cites·27 claims
- 1770US7430134B2Memory cell structure of SRAMTOSHIBA KK·Filed 2007·Granted Sep 30, 2008·8 cites·13 claims
- 1868US6429454B2Semiconductor device with test circuitTOSHIBA KK·Filed 2001·Granted Aug 6, 2002·16 cites·18 claims
- 1964US6154393ASemiconductor memory device of double-data rate modeTOSHIBA KK·Filed 1999·Granted Nov 28, 2000·23 cites·23 claims
- 2064US4956816ANon-volatile semiconductor memory having improved testing circuitryTOSHIBA KK·Filed 1989·Granted Sep 11, 1990·32 cites·3 claims
- 2163US7609581B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Oct 27, 2009·4 cites·5 claims
- 2255US7710808B2Semiconductor memory device including a static memory cellTOSHIBA KK·Filed 2008·Granted May 4, 2010·3 cites·21 claims
- 2351US7085181B2Semiconductor device having storage circuit which stores data in nonvolatile manner by using fuse elementTOSHIBA KK·Filed 2004·Granted Aug 1, 2006·6 cites·12 claims
- 2446US7535753B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted May 19, 2009·1 cites·20 claims
- 2543US6118697ANonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasingTOSHIBA KK·Filed 1999·Granted Sep 12, 2000·7 cites·10 claims
- 2637US7649799B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Jan 19, 2010·0 cites·10 claims
- 2736US2007279998A1Semiconductor device and semiconductor integrated circuitOTSUKA NOBUAKI·Filed 2007·Application pending·0 cites
- 2835US6693305B2Semiconductor device formed by cascade-connecting a plurality of diodesTOSHIBA KK·Filed 2001·Granted Feb 17, 2004·0 cites·15 claims
- 2935US2014050018A1Semiconductor memory deviceTOSHIBA KK·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →