Inventor · disambiguated record
Noritada Sato
Also filed as: SATO NORITADA
20 granted patents·261 citations·filing 1984–2018
94Inventor score
Top patents by PatentIndex Score
20 records- 0191US4565588AMethod for diffusion of impuritiesFUJI ELECTRIC RES·Filed 1984·Granted Jan 21, 1986·85 cites·18 claims
- 0279US9499483B2Crystal of pyrrole derivative and method for producing the sameDAIICHI SANKYO CO LTD·Filed 2015·Granted Nov 22, 2016·3 cites·5 claims
- 0370US4692782ASemiconductor radioactive ray detectorFUJI ELECTRIC RES·Filed 1984·Granted Sep 8, 1987·27 cites·4 claims
- 0468US10308604B2Method for producing pyrrole derivative, and intermediate thereofDAIICHI SANKYO CO LTD·Filed 2018·Granted Jun 4, 2019·0 cites·5 claims
- 0568US4768072AMultilayer semiconductor device having an amorphous carbon and silicon layerFUJI ELECTRIC RES·Filed 1986·Granted Aug 30, 1988·28 cites·2 claims
- 0666US10005725B2Method for producing pyrrole derivative, and intermediate thereofDAIICHI SANKYO CO LTD·Filed 2017·Granted Jun 26, 2018·0 cites·16 claims
- 0764US9765025B2Method for producing pyrrole derivative, and intermediate thereofDAIICHI SANKYO CO LTD·Filed 2016·Granted Sep 19, 2017·0 cites·8 claims
- 0861US5019886ASemiconductor-based radiation-detector elementFUJI ELECTRIC CO LTD·Filed 1988·Granted May 28, 1991·18 cites·3 claims
- 0959US4896200ANovel semiconductor-based radiation detectorFUJI ELECTRIC CO LTD·Filed 1988·Granted Jan 23, 1990·17 cites·6 claims
- 1059US4618381AMethod for adding impurities to semiconductor base materialFUJI ELECTRIC RES·Filed 1984·Granted Oct 21, 1986·24 cites·13 claims
- 1157US9776961B2Crystal of pyrrole derivative and method for producing the sameDAIICHI SANKYO CO LTD·Filed 2017·Granted Oct 3, 2017·0 cites·2 claims
- 1256US5156979ASemiconductor-based radiation-detector elementFUJI ELECTRIC CO LTD·Filed 1991·Granted Oct 20, 1992·20 cites·7 claims
- 1353US9676713B2Crystal of pyrrole derivative and method for producing the sameDAIICHI SANKYO CO LTD·Filed 2016·Granted Jun 13, 2017·0 cites·16 claims
- 1447US4762803AProcess for forming crystalline films by glow dischargeFUJI ELECTRIC CO LTD·Filed 1985·Granted Aug 9, 1988·14 cites·10 claims
- 1544US7547790B2Optically active 4,4-di-substituted oxazolidine derivative and method for producing sameSANKYO CO·Filed 2005·Granted Jun 16, 2009·0 cites·17 claims
- 1644US4835587ASemiconductor device for detecting radiationFUJI ELECTRIC CO LTD·Filed 1987·Granted May 30, 1989·8 cites·7 claims
- 1738US4689649ASemiconductor radiation detectorFUJI ELECTRIC CO LTD·Filed 1985·Granted Aug 25, 1987·5 cites·6 claims
- 1835US4611224ASemiconductor radiation detectorFUJI ELECTRIC RES·Filed 1984·Granted Sep 9, 1986·5 cites·3 claims
- 1934US4960436ARadiation or light detecting semiconductor element containing heavily doped p-type stopper regionFUJI ELECTRIC RES·Filed 1985·Granted Oct 2, 1990·4 cites·1 claims
- 2030US4627991AMethod for forming a protective film on a semiconductor bodyFUJI ELECTRIC RES·Filed 1984·Granted Dec 9, 1986·3 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →