Inventor · disambiguated record
Nobuyuki Tomita
Also filed as: TOMITA NOBUYUKI
20 granted patents·3 pending applications·92 citations·filing 2004–2016
93Inventor score
Top patents by PatentIndex Score
23 records- 0191US7462889B2Avalanche photodiodeMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Dec 9, 2008·17 cites·8 claims
- 0291US7187013B2Avalanche photodiodeMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Mar 6, 2007·16 cites·10 claims
- 0389US7259408B2Avalanche photodiodeMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Aug 21, 2007·13 cites·20 claims
- 0484US7038251B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted May 2, 2006·8 cites·13 claims
- 0582US9422640B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 23, 2016·1 cites·12 claims
- 0680US7763486B2Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jul 27, 2010·7 cites·10 claims
- 0779US7345325B2Avalanche photodiodeMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Mar 18, 2008·4 cites·2 claims
- 0875US8569106B2Method for manufacturing silicon carbide semiconductor deviceHAMANO KENICHI·Filed 2010·Granted Oct 29, 2013·5 cites·8 claims
- 0974US9988738B2Method for manufacturing SiC epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Jun 5, 2018·3 cites·20 claims
- 1071US9957638B2Method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 1, 2018·2 cites·4 claims
- 1169US9903048B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 27, 2018·0 cites·9 claims
- 1269US7187701B2Ridge waveguide semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Mar 6, 2007·9 cites·7 claims
- 1367US7923742B2Method for production of a nitride semiconductor laminated structure and an optical semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Apr 12, 2011·2 cites·24 claims
- 1466US9564315B1Manufacturing method and apparatus for manufacturing silicon carbide epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 7, 2017·1 cites·7 claims
- 1565US8916880B2Silicon carbide epitaxial wafer and semiconductor deviceOHTSUKA KENICHI·Filed 2011·Granted Dec 23, 2014·2 cites·6 claims
- 1663US8679952B2Method of manufacturing silicon carbide epitaxial waferTOMITA NOBUYUKI·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 1752US9752254B2Method for manufacturing a single-crystal 4H—SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 5, 2017·0 cites·9 claims
- 1852US7632695B2Semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Dec 15, 2009·0 cites·6 claims
- 1950US2010289056A1Semiconductor light-emitting devicesMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 2050US2008073660A1Semiconductor light-emitting devicesMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 2147US2006086948A1Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 2242US7172429B2Method of manufacturing semiconductor light emitting deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Feb 6, 2007·0 cites·8 claims
- 2330US9722017B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Aug 1, 2017·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →