Inventor · disambiguated record
Norio Yasuhara
Also filed as: YASUHARA NORIO
62 granted patents·13 pending applications·1,484 citations·filing 1991–2021
99Inventor score
Top patents by PatentIndex Score
75 records- 0198US6353252B1High breakdown voltage semiconductor device having trenched film connected to electrodesTOSHIBA KK·Filed 2000·Granted Mar 5, 2002·260 cites·10 claims
- 0297US6064086ASemiconductor device having lateral IGBTTOSHIBA KK·Filed 1998·Granted May 16, 2000·205 cites·22 claims
- 0392US5448083AInsulated-gate semiconductor deviceTOSHIBA KK·Filed 1994·Granted Sep 5, 1995·75 cites·36 claims
- 0492US5241210AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1991·Granted Aug 31, 1993·123 cites·14 claims
- 0589US5689121AInsulated-gate semiconductor deviceTOSHIBA KK·Filed 1995·Granted Nov 18, 1997·61 cites·19 claims
- 0688US8502305B2Semiconductor device and method for manufacturing sameOHTA TSUYOSHI·Filed 2012·Granted Aug 6, 2013·9 cites·14 claims
- 0788US5838026AInsulated-gate semiconductor deviceTOSHIBA KK·Filed 1997·Granted Nov 17, 1998·58 cites·5 claims
- 0887US9761582B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2016·Granted Sep 12, 2017·6 cites·20 claims
- 0987US8253398B2Semiconductor deviceNAKAMURA KAZUTOSHI·Filed 2009·Granted Aug 28, 2012·21 cites·10 claims
- 1087US5585651AInsulated-gate semiconductor device having high breakdown voltagesTOSHIBA KK·Filed 1995·Granted Dec 17, 1996·56 cites·30 claims
- 1186US5985708AMethod of manufacturing vertical power deviceTOSHIBA KK·Filed 1997·Granted Nov 16, 1999·73 cites·6 claims
- 1285US9159722B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Oct 13, 2015·9 cites·20 claims
- 1384US7473978B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jan 6, 2009·9 cites·9 claims
- 1483US10418470B2Semiconductor device having IGBT portion and diode portionTOSHIBA KK·Filed 2018·Granted Sep 17, 2019·4 cites·11 claims
- 1583US9634128B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 25, 2017·4 cites·11 claims
- 1682US6720618B2Power MOSFET deviceTOSHIBA KK·Filed 2002·Granted Apr 13, 2004·24 cites·14 claims
- 1780US7061060B2Offset-gate-type semiconductor deviceTOSHIBA KK·Filed 2003·Granted Jun 13, 2006·19 cites·17 claims
- 1880US6552389B2Offset-gate-type semiconductor deviceTOSHIBA KK·Filed 2001·Granted Apr 22, 2003·19 cites·12 claims
- 1979US8643095B2Semiconductor transistor device and method for manufacturing sameSUZUKI MIWAKO·Filed 2011·Granted Feb 4, 2014·7 cites·5 claims
- 2077US6864533B2MOS field effect transistor with reduced on-resistanceTOSHIBA KK·Filed 2001·Granted Mar 8, 2005·20 cites·8 claims
- 2176US7663186B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Feb 16, 2010·4 cites·18 claims
- 2276US5378920AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1993·Granted Jan 3, 1995·48 cites·14 claims
- 2375US8067801B2Semiconductor device and method of manufacturing the sameMATSUDAI TOMOKO·Filed 2008·Granted Nov 29, 2011·6 cites·12 claims
- 2475US7138698B2Semiconductor device including power MOS field-effect transistor and driver circuit driving thereofTOSHIBA KK·Filed 2004·Granted Nov 21, 2006·16 cites·29 claims
- 2574US5640040AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1995·Granted Jun 17, 1997·40 cites·5 claims
- 2674US5438220AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1993·Granted Aug 1, 1995·42 cites·22 claims
- 2773US7906808B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Mar 15, 2011·3 cites·20 claims
- 2872US7589389B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Sep 15, 2009·4 cites·4 claims
- 2971US5434444AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1994·Granted Jul 18, 1995·34 cites·29 claims
- 3071US5343067AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1992·Granted Aug 30, 1994·34 cites·36 claims
- 3169US7579669B2Semiconductor device including power MOS field-effect transistor and driver circuit driving thereofTOSHIBA KK·Filed 2006·Granted Aug 25, 2009·3 cites·6 claims
- 3268US5536961AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1995·Granted Jul 16, 1996·28 cites·11 claims
- 3367US7646059B2Semiconductor device including field effect transistor for use as a high-speed switching device and a power deviceTOSHIBA KK·Filed 2006·Granted Jan 12, 2010·3 cites·18 claims
- 3467US5294825AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1991·Granted Mar 15, 1994·37 cites·35 claims
- 3566US8159036B2Semiconductor device and method of manufacturing the sameMATSUDAI TOMOKO·Filed 2008·Granted Apr 17, 2012·3 cites·6 claims
- 3665US9496352B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Nov 15, 2016·1 cites·20 claims
- 3765US8362554B2MOSFET semiconductor device with backgate layer and reduced on-resistanceTOSHIBA KK·Filed 2010·Granted Jan 29, 2013·3 cites·6 claims
- 3862US10438946B2Semiconductor device and electrical apparatusTOSHIBA KK·Filed 2017·Granted Oct 8, 2019·1 cites·20 claims
- 3962US10439038B2Semiconductor device and electrical apparatusTOSHIBA KK·Filed 2018·Granted Oct 8, 2019·1 cites·8 claims
- 4060US7067876B2Semiconductor deviceTOSHIBA KK·Filed 2002·Granted Jun 27, 2006·9 cites·24 claims
- 4159US6878992B2Vertical-type power MOSFET with a gate formed in a trenchTOSHIBA KK·Filed 2002·Granted Apr 12, 2005·8 cites·31 claims
- 4259US6163051AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1998·Granted Dec 19, 2000·18 cites·10 claims
- 4354US5463231AMethod of operating thyristor with insulated gatesTOSHIBA KK·Filed 1994·Granted Oct 31, 1995·13 cites·20 claims
- 4453US5751022AThyristorTOSHIBA KK·Filed 1997·Granted May 12, 1998·14 cites·22 claims
- 4553US5592014AHigh breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1995·Granted Jan 7, 1997·19 cites·10 claims
- 4652US11798997B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Oct 24, 2023·0 cites·6 claims
- 4752US7692242B2Semiconductor device used as high-speed switching device and power deviceTOSHIBA KK·Filed 2006·Granted Apr 6, 2010·0 cites·8 claims
- 4851US8502309B2Semiconductor device including field effect transistor for use as a high-speed switching device and a power deviceKAWAGUCHI YUSUKE·Filed 2009·Granted Aug 6, 2013·0 cites·26 claims
- 4950US10141455B2Semiconductor deviceTOSHIBA KK·Filed 2017·Granted Nov 27, 2018·0 cites·4 claims
- 5050US7061048B2Power MOSFET deviceTOSHIBA KK·Filed 2004·Granted Jun 13, 2006·2 cites·34 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →